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vishay SI2305DS-T1-E3
Transistor 3.5 A, 8 V, P-Channel, Si
Brands: Vishay
Mfr.Part #: SI2305DS-T1-E3
Datasheet: SI2305DS-T1-E3 Datasheet (PDF)
Package/Case: SOT-23-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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The SI2305DS-T1-E3 is a P-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is designed for low voltage, high-speed switching applications. It has a maximum drain-source voltage (Vds) of -20V and a continuous drain current (Id) of -3.2A, making it suitable for a wide range of portable electronics and battery-operated devices.This MOSFET has a low on-resistance of 175mOhms at a gate-source voltage (Vgs) of -4.5V, ensuring efficient power handling and minimal power loss during operation. It also has a low threshold voltage (Vgs(th)) of -1 to -2.5V, allowing for easy control and triggering of the transistor.The SI2305DS-T1-E3 comes in a compact SOT-23 package, making it ideal for space-constrained applications where size and weight are critical factors. It has a maximum operating temperature of 150°C, ensuring reliability and stability under various working conditions.
Features
Application
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay / Siliconix |
| Product Type | MOSFET | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Part # Aliases | SI2305DS-E3 |
| Unit Weight | 0.000282 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI2305DS-T1-E3 is a chip widely used in electronic devices. It is a N-channel MOSFET transistor with a maximum voltage rating of 20V and a continuous drain current of 3.2A. The chip's compact size, low on-resistance, and fast switching capabilities make it suitable for various applications, including power management, battery charging, and load switching.
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Equivalent
Some equivalent products of the SI2305DS-T1-E3 chip include MMBT2305LT1G, NDS2305NT1G, and BSS84LT1G. These chips are all N-channel MOSFET transistors with similar specifications and functionalities. -
Features
The SI2305DS-T1-E3 is a dual N-channel enhancement mode MOSFET. It has a maximum drain-source voltage of 20V, continuous drain current of 1.6A, and low on-resistance. This MOSFET offers low power dissipation, high efficiency, and is suitable for a wide range of applications, including power management and load switching. -
Pinout
The SI2305DS-T1-E3 is a dual N-channel enhancement mode MOSFET transistor. It has 8 pins and serves as a switch by controlling the flow of current through its terminals. The pin count typically includes gate, source, and drain terminals for both MOSFET transistors present in the package. -
Manufacturer
The manufacturer of the SI2305DS-T1-E3 is Vishay Semiconductor. Vishay Semiconductor is a global semiconductor company that designs, manufactures, and supplies a wide range of components for various industries, including automotive, telecommunications, consumer electronics, and industrial applications. -
Application Field
The SI2305DS-T1-E3 is a small signal N-channel MOSFET transistor designed for high-speed switching applications. It can be used in a variety of areas, including but not limited to power management circuits, portable electronic devices, battery-powered systems, and low-voltage motor drives. Its compact size and high switching capabilities make it suitable for applications where efficiency and space savings are important. -
Package
The SI2305DS-T1-E3 chip has a package type of SOT-23-3. It comes in the form of a surface mount device (SMD). The size of the chip is compact and small, as per the SOT-23-3 package standard.
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