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vishay IRFD110PBF
High Voltage N-channel MOSFET, 100V, 1A, 4-pin Dual In-line Package
Brands: Vishay
Mfr.Part #: IRFD110PBF
Datasheet: IRFD110PBF Datasheet (PDF)
Package/Case: HVMDIP-4
RoHS Status:
Stock Condition: 6903 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.447 | $0.447 |
| 10 | $0.395 | $3.950 |
| 30 | $0.368 | $11.040 |
| 100 | $0.342 | $34.200 |
| 500 | $0.327 | $163.500 |
| 1000 | $0.319 | $319.000 |
In Stock:6903 PCS
IRFD110PBF General Description
MOSFET, N, DIL; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:1A; Resistance, Rds On:0.54ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:DIP; Termination Type:Through Hole; Current, Idm Pulse:8A; Device Marking:IRFD110PBF; Lead Spacing:2.54mm; No. of Pins:4; Power Dissipation:1.3W; Power, Pd:1.3W; Row Pitch:7.62mm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:100V
Features
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | HVMDIP-4 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 1 A | Rds On - Drain-Source Resistance | 540 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 8.3 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 1.3 W |
| Channel Mode | Enhancement | Series | IRFD |
| Brand | Vishay / Siliconix | Configuration | Single |
| Fall Time | 9.4 ns | Forward Transconductance - Min | 0.8 S |
| Height | 3.37 mm | Length | 6.29 mm |
| Product Type | MOSFET | Rise Time | 16 ns |
| Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 6.9 ns | Width | 5 mm |
| Unit Weight | 0.064234 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IRFD110PBF is a power MOSFET chip designed for high-speed switching applications in power supplies, motor control, and battery management. It has a low on-state resistance and high current handling capabilities, making it suitable for various industrial and automotive applications.
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Equivalent
The equivalent products of IRFD110PBF chip are IRFR5305PBF, IRFD110, IRFD113, IRFR5305. These are all N-Channel Power MOSFETs with similar specifications and performance characteristics. -
Features
1. N-channel power MOSFET 2. 100V drain-source voltage rating 3. Low on-resistance of 0.2 ohms 4. TO-252AA (DPAK) surface mount package 5. Suitable for high voltage applications 6. Fast switching speed and high current handling capability -
Pinout
The IRFD110PBF is a power MOSFET with a pin count of 3. Pin 1 is the Gate, Pin 2 is the Drain, and Pin 3 is the Source. It is commonly used for switching applications in circuits with low voltage and high current requirements. -
Manufacturer
The manufacturer of the IRFD110PBF is Vishay Intertechnology, Inc. Vishay is a global company that specializes in manufacturing a wide range of electronic components, including discrete semiconductors and passive components. They have a reputation for producing high-quality and reliable products for various industries, such as automotive, telecommunications, industrial, and consumer electronics. -
Application Field
The IRFD110PBF is a power MOSFET particularly suited for use in power supply, motor control, and automotive applications due to its high current handling capability and low on-state resistance. It can also be used in industrial automation, lighting, and audio amplifier systems, achieving efficient power management and performance. -
Package
The IRFD110PBF chip comes in a TO-252AA package type, with a through-hole mounting form. It has a size of 6.5mm x 6.1mm x 3.9mm.
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