vishay SI4202DY-T1-GE3
High Current Handling: Capable of handling up to 12.1A of current, this MOSFET array is suitable for a wide range of applications
Brands: Vishay
Mfr.Part #: SI4202DY-T1-GE3
Datasheet: SI4202DY-T1-GE3 Datasheet (PDF)
Package/Case: SOIC-8
Product Type: MOSFET
RoHS Status:
Stock Condition: 5000 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomSI4202DY-T1-GE3 General Description
The SI4202DY-T1-GE3 is a high-side switch IC developed by Vishay Semiconductor. It is designed for high current applications in automotive and industrial systems. This device is equipped with built-in protection features like overcurrent, overvoltage, and thermal shutdown to ensure safe and reliable operation. The SI4202DY-T1-GE3 can handle a maximum load voltage of 40V and a continuous load current of up to 5.2A. It has a low on-resistance of 75mohm, which helps to minimize power dissipation and improve efficiency. The high-side switch is controlled by a logic input signal, making it easy to integrate into digital control systems. This device is housed in a compact and thermally efficient power package. It operates over a wide temperature range from -40°C to 125°C, making it suitable for harsh environments. The SI4202DY-T1-GE3 is compliant with AEC-Q100 automotive standards, ensuring high reliability in automotive applications.
Features
Application
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 12.1 A |
Rds On - Drain-Source Resistance | 14 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 17 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 3.7 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI4 |
Brand | Vishay Semiconductors | Configuration | Dual |
Fall Time | 8 ns | Forward Transconductance - Min | 33 S |
Product Type | MOSFET | Rise Time | 18 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Typical Turn-Off Delay Time | 14 ns |
Typical Turn-On Delay Time | 11 ns | Part # Aliases | SI4202DY-GE3 |
Unit Weight | 0.026455 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI4202DY-T1-GE3 chip is an IC (integrated circuit) used in electronic devices. It is a power MOSFET (metal-oxide-semiconductor field-effect transistor) that enables the control of electrical signals in a circuit. This chip offers high efficiency, low on-resistance, and a compact design. It is commonly used in applications such as consumer electronics, automotive, and power management systems.
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Pinout
The SI4202DY-T1-GE3 is a dual N-channel MOSFET with a 6-pin DFN package. Its pins include G (gate), D (drain), and S (source) for each MOSFET channel. The pin count is 6, and its primary function is to control and switch electrical current in electronic circuits. -
Manufacturer
The manufacturer of SI4202DY-T1-GE3 is Vishay Siliconix. Vishay Siliconix is an American company specializing in the production of power semiconductors and passive electronic components. -
Application Field
The SI4202DY-T1-GE3 is a dual N-channel MOSFET that can be used in various applications such as power management, switching, and amplification in devices like smartphones, tablets, laptops, and other portable electronics. Its compact size and high efficiency make it suitable for applications requiring space-saving and energy-efficient solutions. -
Package
The SI4202DY-T1-GE3 chip is in a package type known as SOIC-8. It has a form factor of Dual In-Line, which means it has two rows of pins on opposite sides. The size of the chip is 5.8mm x 6.2mm.
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