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vishay SI2347DS-T1-GE3
-30V P-MOSFET transistor with unipolar operation and -5A current rating, featuring peak current handling up to -20A and power dissipation of 1
Brands: Vishay
Mfr.Part #: SI2347DS-T1-GE3
Datasheet: SI2347DS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 6000 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.133 | $0.665 |
| 50 | $0.117 | $5.850 |
| 150 | $0.109 | $16.350 |
| 500 | $0.092 | $46.000 |
| 3000 | $0.088 | $264.000 |
| 6000 | $0.085 | $510.000 |
In Stock:6000 PCS
SI2347DS-T1-GE3 General Description
Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Features
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 33 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 6.9 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 9 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 6 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 6 ns | Width | 1.6 mm |
| Part # Aliases | SI2347DS-T1-BE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2347DS-T1-GE3 chip is an electronic component used in various applications. It is a high-performance N-Channel MOSFET that is designed to enhance power efficiency and minimize space requirements. This chip offers low ON-resistance and high-speed switching, making it suitable for use in power management circuits, motor control systems, and other electronic devices that require efficient power handling.
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Equivalent
An equivalent product of the SI2347DS-T1-GE3 chip is the SI2347DS-T1-GE3R chip. -
Features
The features of SI2347DS-T1-GE3 include a low on-resistance, low charge gate, high-speed switching, low capacitance, and N-channel TrenchFET. It is designed to provide efficient power management and secure high-performance in a small package. -
Pinout
The SI2347DS-T1-GE3 is a 47-pin integrated circuit (IC). It functions as an N-MOSFET (metal-oxide-semiconductor field-effect transistor) that enables power management and control in electronic devices. -
Manufacturer
The manufacturer of the SI2347DS-T1-GE3 is Vishay Siliconix. It is a semiconductor company that specializes in designing, manufacturing, and supplying a wide range of discrete semiconductors and passive components. They offer innovative solutions for various industries including automotive, industrial, consumer electronics, telecommunications, and more. -
Application Field
The SI2347DS-T1-GE3 is a dual N-channel MOSFET used primarily in power management applications such as DC-DC converters, battery chargers, and voltage regulators. It offers low on-resistance, high current capacity, and fast switching capabilities, making it suitable for various power management systems. -
Package
The SI2347DS-T1-GE3 chip has a package type of PowerPAK SO-8, a form of surface mount, and a size of 5mm x 6mm x 1mm.
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