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vishay SI2307BDS-T1-E3
SI2307BDS-T1-E3 is a ROHS-compliant MOSFET suitable for a variety of electronic applications
Brands: Vishay
Mfr.Part #: SI2307BDS-T1-E3
Datasheet: SI2307BDS-T1-E3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 3662 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.361 | $0.361 |
| 10 | $0.287 | $2.870 |
| 30 | $0.256 | $7.680 |
| 100 | $0.218 | $21.800 |
| 500 | $0.199 | $99.500 |
| 1000 | $0.190 | $190.000 |
In Stock:3662 PCS
SI2307BDS-T1-E3 General Description
SI2307BDS-T1-E3 is a P-Channel Enhancement-Mode Field Effect Transistor (FET) manufactured by Vishay. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of -3.8A. The device has a low threshold voltage of -0.8V, making it suitable for low-voltage applications.The SI2307BDS-T1-E3 has a low on-resistance (Rds(on)) of 27mOhm, minimizing power loss and improving efficiency in various circuit designs. It also has a fast switching speed, which enables quick response times in switching applications.This FET is housed in a miniature SC-70 package, which is compact and space-saving, making it ideal for applications with limited board space. The small package size also allows for high component density on a circuit board.
Features
- P-Channel Mosfet Transistor
- Model Number: SI2307BDS-T1-E3
- Drain-Source Voltage: -20V
- Continuous Drain Current: -9.5A
- Low On-Resistance: 34mOhm
- Small Footprint
- RoHS Compliant
Application
- Power management systems
- Battery management systems
- Voltage regulation systems
- Electronic control units
- Industrial automation systems
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 2.5 A | Rds On - Drain-Source Resistance | 78 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 9 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 750 mW |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 14 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 12 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 25 ns |
| Typical Turn-On Delay Time | 9 ns | Width | 1.6 mm |
| Part # Aliases | SI2307BDS-T1-BE3 SI2307BDS-E3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI2307BDS-T1-E3 is a P-channel MOSFET designed for low voltage applications. It features a low on-resistance of 1.9 ohms and a maximum drain-source voltage of -20V. The chip is suitable for battery protection circuits, load switching, and power management systems.
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Equivalent
The equivalent products of SI2307BDS-T1-E3 chip are SI2307EDS-T1-E3, SI2307CDS-T1-E3, SI2307BDS-T1-E3, SI2307ADS-T1-E3, and SI2307DST1GE3. These chips are all N-channel MOSFET transistors with similar specifications and performance characteristics. -
Features
The SI2307BDS-T1-E3 is a dual N-channel MOSFET with a voltage rating of 20V and a continuous drain current of 2.3A. It features a low on-resistance, fast switching speed, and low gate threshold voltage. This MOSFET is suitable for applications such as power management, load switching, and DC-DC conversion. -
Pinout
The SI2307BDS-T1-E3 is a dual N-channel MOSFET transistor with a pin count of 6. Pin 1 is the gate of the first channel, pin 2 is the source of the first channel, pin 3 is the drain of the first channel, pin 4 is the drain of the second channel, pin 5 is the source of the second channel, and pin 6 is the gate of the second channel. -
Manufacturer
Vishay is the manufacturer of the SI2307BDS-T1-E3. Vishay is a global company that specializes in manufacturing a wide range of electronic components, including semiconductors, resistors, capacitors, and inductors. They provide components for a variety of industries, such as automotive, consumer electronics, and telecommunications. -
Application Field
The SI2307BDS-T1-E3 is a P-channel MOSFET transistor commonly used in power management applications such as battery charging, voltage regulation, and motor control. It can also be used in load switch circuits, LED lighting, and DC-DC converters due to its low on-resistance and high current capability. -
Package
The SI2307BDS-T1-E3 chip is in a Surface Mount package type with a Dual N-Channel configuration. It comes in a form factor of 8-SOIC (0.154", 3.90mm Width) and has a size of 5mm x 4.7mm.
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