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vishay SI2323DS-T1-GE3
Features: Low resistance P Channel MOSFETs with a 1V threshold voltage at 250uA current
Brands: Vishay
Mfr.Part #: SI2323DS-T1-GE3
Datasheet: SI2323DS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 6473 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.400 | $0.400 |
| 10 | $0.331 | $3.310 |
| 30 | $0.301 | $9.030 |
| 100 | $0.264 | $26.400 |
| 500 | $0.248 | $124.000 |
| 1000 | $0.238 | $238.000 |
In Stock:6473 PCS
SI2323DS-T1-GE3 General Description
P-Channel 20 V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Features
- Small Signal MOSFET
- Enhancement Mode
- Drain-Source Voltage: 20V
- Continuous Drain Current: 2A
- Low On-Resistance: 76mOhm
- Compact SOT-23 Package
- High Efficiency and Power Density
- Suitable for portable electronics and power management applications
Application
- Battery management systems
- Motor drive circuits
- Power management in portable electronics
- DC-DC converters
- Switching regulators
- Smart power switches
- Pulse transformers
- Industrial automation systems
- Renewable energy systems
- LED lighting
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 4.7 A | Rds On - Drain-Source Resistance | 39 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 12.5 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 48 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 43 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 71 ns |
| Typical Turn-On Delay Time | 25 ns | Width | 1.6 mm |
| Part # Aliases | SI2323DS-T1-BE3 SI2323DS-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2323DS-T1-GE3 is a power MOSFET from Vishay Siliconix that offers high efficiency in a compact package. It is ideal for applications requiring low power consumption and high switching speeds. With a low on-resistance and fast switching capabilities, this chip is commonly used in power management circuits, battery protection, and DC-DC converters.
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Equivalent
The equivalent products of SI2323DS-T1-GE3 chip are SI2302DS-T1-GE3, SI2307DS-T1-GE3, SI2304DS-T1-GE3, SI2308DS-T1-GE3, SI2306DS-T1-GE3, SI2317DS-T1-GE3, and SI2316DS-T1-GE3. These are alternative options that can be used as replacements for the SI2323DS-T1-GE3 chip. -
Features
SI2323DS-T1-GE3 is a P-channel MOSFET transistor with a 20V drain-source voltage and a -2.4A drain current. It features low on-resistance, fast switching speed, and high power density. This transistor is suitable for portable electronics, power management, and other low voltage applications. -
Pinout
The SI2323DS-T1-GE3 is a dual N-channel MOSFET transistor with a pin count of 6. It is used for power management applications, such as load switches and battery protection. Pin functions include two gate pins (1 and 6), two source pins (2 and 5), and two drain pins (3 and 4). -
Manufacturer
Vishay Intertechnology is the manufacturer of SI2323DS-T1-GE3. It is an American company specializing in discrete electronic components and passive components. Vishay Intertechnology produces a wide range of products including resistors, capacitors, inductors, diodes, and transistors for various industries such as automotive, industrial, computing, telecommunications, and consumer electronics. -
Application Field
The SI2323DS-T1-GE3 can be used in a variety of applications such as power management in portable devices, voltage regulation, and load switching. It is commonly used in battery-powered devices, including smartphones, tablets, and handheld gaming consoles, as well as in industrial applications requiring efficient power management and control. -
Package
The SI2323DS-T1-GE3 chip comes in a surface mount package type, with a form of MOSFET and a size of SC-70.
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