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Orders Over
$5000vishay SI7850DP-T1-E3
PowerPAK SO package
Brands: Vishay
Mfr.Part #: SI7850DP-T1-E3
Datasheet: SI7850DP-T1-E3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 5,343 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI7850DP-T1-E3 General Description
MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.2A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:27nC; No. of Pins:8; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:3000; Resistance, Rds on Max:0.022ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.3°C/W; Voltage, Vds Max:60V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1V; Width, External:6.2mm; Width, Tape:12mm
Features
Application
Primary Side Switch for 24 V DC/DC Applications |Secondary Synchronous RectifierSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 6.2 A | Rds On - Drain-Source Resistance | 22 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 18 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.8 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI7 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 12 ns |
| Forward Transconductance - Min | 26 S | Height | 1.04 mm |
| Length | 6.15 mm | Product Type | MOSFET |
| Rise Time | 10 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N Channel |
| Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 10 ns |
| Width | 5.15 mm | Part # Aliases | SI7850DP-E3 |
| Unit Weight | 0.017870 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI7850DP-T1-E3 is a power MOSFET chip designed for high-speed switching applications. It is manufactured by Vishay Siliconix and features low on-resistance and a small form factor. This chip is commonly used in various power management systems, such as DC-DC converters and motor control circuits, to improve efficiency and performance.
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Features
The SI7850DP-T1-E3 is a high-speed, low-loss MOSFET with a compact design. It offers low on-state resistance, fast switching capabilities, and a low profile package, making it suitable for power management applications such as DC-DC converters and motor control. -
Pinout
The SI7850DP-T1-E3 has a pin count of 8. It is a dual P-channel MOSFET with a 30V drain-source voltage and a -11.7A continuous drain current. -
Manufacturer
The manufacturer of the SI7850DP-T1-E3 is Vishay Intertechnology, a global semiconductor and electronic components company. -
Application Field
The SI7850DP-T1-E3 is a power MOSFET that is commonly used in various applications such as power supplies, voltage regulators, motor control circuits, and lighting applications. It is designed to handle high currents and voltages, making it suitable for a wide range of industrial and automotive applications. -
Package
The SI7850DP-T1-E3 chip has a package type of PowerPAK SO-8, a form of Surface Mount, and a size of 5mm x 6mm x 1.6mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
