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vishay SI2374DS-T1-GE3
Si2374DS Series 20 V 0.030 Ohm SMT N-Channel MOSFET - SOT-23 (TO-236)
Brands: VISHAY
Mfr.Part #: SI2374DS-T1-GE3
Datasheet: SI2374DS-T1-GE3 Datasheet (PDF)
Package/Case: SOT23-3
Product Type: MOSFETs
RoHS Status:
Stock Condition: 6000 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MOSFET, N-CH, 20V, 5.9A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 5.9 A | Rds On - Drain-Source Resistance | 30 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 7.7 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 10 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 23 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 16 ns |
| Typical Turn-On Delay Time | 10 ns | Width | 1.6 mm |
| Part # Aliases | SI2374DS-T1-BE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2374DS-T1-GE3 is a dual N-channel MOSFET power transistor designed for high power applications in automotive and industrial systems. It features low on-resistance, fast switching speed, and high power efficiency. This chip is suitable for use in a wide range of power management applications, including motor control, power supplies, and LED lighting.
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Equivalent
Some equivalent products of SI2374DS-T1-GE3 chip are SI2374DS-T1-E3, SI2374DS-T1-XT1-GE3, and SI2374DS-T1-E3-GE3. These chips are all power MOSFETs with similar specifications and performance characteristics. -
Features
Si2374DS-T1-GE3 is a dual n-channel MOSFET with a maximum drain-source voltage of 20V, high power density, low on-resistance, and low threshold voltage. It is suitable for battery-powered applications, load switching, and power management in portable devices. It is protected against electrostatic discharge and offers high energy efficiency. -
Pinout
The SI2374DS-T1-GE3 is a Dual N-Channel MOSFET with a pin count of 8. Pin functions include gate 1, source 1, drain 1, substrate, gate 2, source 2, drain 2, and substrate. -
Manufacturer
The SI2374DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc., a global company specializing in the manufacturing of discrete semiconductors and passive electronic components. They provide components for a wide range of industries, including automotive, industrial, consumer electronics, and telecommunications. With a focus on innovation and quality, Vishay is a trusted partner for many leading companies in the electronics industry. -
Application Field
The SI2374DS-T1-GE3 is commonly used in industrial automation, power management, smart energy, and telecommunications applications. It is suitable for applications that require high-performance, low power consumption, and small form factor. The device’s ability to provide high efficiency, precise control, and reliability make it ideal for a wide range of applications in various industries. -
Package
The SI2374DS-T1-GE3 chip comes in a DFN-8 package, with a 2x2 mm form factor.
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