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vishay SI2312CDS-T1-GE3
Single N-Channel 20 V 31.8 mO 8.8 nC Surface Mount Mosfet - SOT-23
Brands: VISHAY
Mfr.Part #: SI2312CDS-T1-GE3
Datasheet: SI2312CDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23
RoHS Status:
Stock Condition: 6000 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.184 | $0.920 |
| 50 | $0.163 | $8.150 |
| 150 | $0.153 | $22.950 |
| 500 | $0.142 | $71.000 |
| 3000 | $0.117 | $351.000 |
| 6000 | $0.113 | $678.000 |
In Stock:6000 PCS
SI2312CDS-T1-GE3 General Description
MOSFET,N CH,20V,6A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):26500µohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Power Dissipation Pd:1.25W; Voltage Vgs Max:8V
Features
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 6 A | Rds On - Drain-Source Resistance | 31.8 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 8.8 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.1 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 8 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 17 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 31 ns |
| Typical Turn-On Delay Time | 8 ns | Width | 1.6 mm |
| Part # Aliases | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2312CDS-T1-GE3 chip is a component used in electronic devices for switching applications. It is a P-Channel MOSFET transistor designed for low voltage applications. This chip offers low on-resistance and fast switching speeds, making it suitable for power management tasks. It is commonly used in various consumer electronics, such as smartphones, tablets, and portable devices, to control the flow of electrical currents.
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Equivalent
The equivalent products of SI2312CDS-T1-GE3 chip include SI2312CDS-T1-GE4, SI2312CDS-T1-GE3R, and SI2312CDS-T1-GE3R2. -
Features
The SI2312CDS-T1-GE3 is a dual N-channel MOSFET transistor. It has a low on-resistance, high power and current handling capability, and is suitable for use in various applications such as power management, battery protection, and DC-DC converters. -
Pinout
SI2312CDS-T1-GE3 is a dual N-channel MOSFET. It has a pin count of 6. The pin configuration is as follows: Pin 1, Gate 1; Pin 2, Source 1; Pin 3, Drain 1; Pin 4, Source 2; Pin 5, Drain 2; Pin 6, Gate 2. The dual MOSFET is commonly used for power control applications. -
Manufacturer
The manufacturer of SI2312CDS-T1-GE3 is Vishay Siliconix. It is a company that specializes in developing and manufacturing a wide range of semiconductor devices and electronic components. -
Application Field
The SI2312CDS-T1-GE3 is a MOSFET transistor commonly used in various applications including power management, motor control, switch-mode power supplies, and electronic circuits requiring low voltage and high power efficiency. It is designed for use in a wide range of industries such as automotive, telecommunications, consumer electronics, and industrial automation. -
Package
The SI2312CDS-T1-GE3 chip is packaged in SOT-23 form factor. Its package size is compact and measures approximately 3mm x 1.4mm x 1.1mm.
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