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vishay SI2312BDS-T1-E3
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
Brands: vishay
Mfr.Part #: SI2312BDS-T1-E3
Datasheet: SI2312BDS-T1-E3 Datasheet (PDF)
Package/Case: SOT-23
Product Type: MOSFET
RoHS Status:
Stock Condition: 1783 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2312; Current Id Max:5A; Package / Case:SOT-23; Power Dissipation Pd:750µW; Pulse Current Idm:15A; SMD Marking:M2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 31 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 450 mV |
| Qg - Gate Charge | 12 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 10 ns |
| Forward Transconductance - Min | 30 S | Height | 1.45 mm |
| Length | 2.9 mm | Product Type | MOSFET |
| Rise Time | 30 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 35 ns | Typical Turn-On Delay Time | 9 ns |
| Width | 1.6 mm | Part # Aliases | SI2312BDS-T1-BE3 SI2312BDS-E3 |
| Unit Weight | 0.000282 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2312BDS-T1-E3 is a chip commonly used in electronic devices for voltage regulation and power management. It is designed to provide efficient switching capabilities, allowing for better control and regulation of electrical power. The chip is compact in size, making it ideal for applications where space is limited.
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Features
The features of SI2312BDS-T1-E3 include a low on-resistance, high current handling capability, and low gate threshold voltage. It is a P-channel MOSFET transistor in a SOT-23 package with a voltage rating of -20V. -
Pinout
The SI2312BDS-T1-E3 is a MOSFET transistor with a 3-pin configuration. Pin count and function are as follows: Pin 1 = Gate (G), Pin 2 = Source (S), and Pin 3 = Drain (D). -
Manufacturer
The manufacturer of the SI2312BDS-T1-E3 is Vishay Siliconix. Vishay Siliconix is a semiconductor company that specializes in manufacturing and supplying power management devices, microcontrollers, discrete semiconductors, and passive electronic components. -
Application Field
The SI2312BDS-T1-E3 is a small signal N-channel MOSFET transistor. It is commonly used in applications such as power management, voltage regulation, and signal amplification in electronic devices such as mobile phones, laptops, and audio systems. -
Package
The SI2312BDS-T1-E3 chip has a SOT-23 package type, with three pins. Its dimensions are approximately 2.9mm x 1.3mm x 1.0mm.
We provide high quality products, thoughtful service and after sale guarantee
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