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vishay SI4477DY-T1-GE3
MOSFET with -20V Drain-to-Source Voltage and 12V Gate-to-Source Voltage in SO-8 Package
Brands: Vishay
Mfr.Part #: SI4477DY-T1-GE3
Datasheet: SI4477DY-T1-GE3 Datasheet (PDF)
Package/Case: SOIC-8
RoHS Status:
Stock Condition: 7500 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.789 | $0.789 |
| 10 | $0.683 | $6.830 |
| 30 | $0.630 | $18.900 |
| 100 | $0.577 | $57.700 |
| 500 | $0.546 | $273.000 |
| 1000 | $0.528 | $528.000 |
In Stock:7500 PCS
SI4477DY-T1-GE3 General Description
P-Channel 20 V 26.6A (Tc) 3W (Ta), 6.6W (Tc) Surface Mount 8-SOIC
Features
- Integrated high-side and low-side N-channel MOSFET drivers
- Drives single-ended synchronous buck converters
- Low-side driver can be disabled for system standby mode
- Adaptive dead-time control for optimized efficiency
- Pull-up voltage for high-side gate driver is adjustable
- Programmable UVLO for system protection
Application
- Switching regulators
- Battery powered systems
- Portable communication devices
- Power management systems
- DC-DC converters
- LED lighting
- Voltage regulation
- Industrial equipment
- Automotive electronics
- Consumer electronics
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 26.6 A |
| Rds On - Drain-Source Resistance | 6.2 mOhms | Vgs - Gate-Source Voltage | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage | 600 mV | Qg - Gate Charge | 125 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 6.6 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SI4 |
| Brand | Vishay Semiconductors | Configuration | Single |
| Fall Time | 42 ns | Forward Transconductance - Min | 10 S |
| Height | 1.75 mm | Length | 4.9 mm |
| Product Type | MOSFET | Rise Time | 42 ns |
| Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 100 ns |
| Typical Turn-On Delay Time | 42 ns | Width | 3.9 mm |
| Part # Aliases | SI4477DY-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI4477DY-T1-GE3 is a MOSFET transistor chip primarily used for power management applications. It features low on-resistance, high current ratings, and efficient switching capabilities. The chip is commonly utilized in power supplies, motor control circuits, LED lighting, and other electronic devices requiring high-power handling and efficient performance.
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Equivalent
The equivalent products of SI4477DY-T1-GE3 chip are IRF7904PBF, FDMS86381TC, IRFB3207PBF, IRF7832PBF, and FCP300N60. These are all N-channel power MOSFETs with similar specifications and operating characteristics. -
Features
SI4477DY-T1-GE3 is a N-channel MOSFET with a low on-resistance of 12 mΩ, a maximum drain current of 45 A, and a maximum voltage rating of 30 V. It is designed for efficient power management applications in automotive and industrial sectors. -
Pinout
The SI4477DY-T1-GE3 is a 5-pin integrated circuit with the following functions: Pin 1 (GATE) is used to control the gate of a MOSFET, Pin 2 (SOURCE) is connected to the source of the MOSFET, Pin 3 (GND) is the ground pin, and Pins 4 and 5 (VCC) are used to provide power to the IC. -
Manufacturer
The manufacturer of the SI4477DY-T1-GE3 is Vishay Intertechnology, Inc. It is an American company that manufactures electronic components and equipment, specializing in passive electronic components and semiconductor products. Vishay products can be found in a wide range of industries including automotive, industrial, consumer electronics, telecommunications, and aerospace. -
Application Field
The SI4477DY-T1-GE3 is commonly used in power management applications, such as DC-DC converters, LED lighting, and battery chargers. It can also be found in audio amplifiers and systems, motor control circuits, and automotive electronics due to its high performance and efficiency characteristics. -
Package
The SI4477DY-T1-GE3 chip comes in a D-Sub package type, with a surface mount form factor. Its size is typically around 7.6 mm x 4mm.
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