vishay SIA519EDJ-T1-GE3
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Brands: VISHAY
Mfr.Part #: SIA519EDJ-T1-GE3
Datasheet: SIA519EDJ-T1-GE3 Datasheet (PDF)
Package/Case: QFN6
Product Type: MOSFET
RoHS Status:
Stock Condition: 12000 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MOSFET, N & P CH, 20V, 4.5A, POWERPAK; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:7.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-SC70-6 | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4.5 A | Rds On - Drain-Source Resistance | 40 mOhms, 90 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 600 mV, 500 mV |
Qg - Gate Charge | 3.7 nC, 5.3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 7.8 W |
Channel Mode | Enhancement | Tradename | TrenchFET, PowerPAK |
Series | SIA | Brand | Vishay Semiconductors |
Configuration | Dual | Fall Time | 16 ns, 10 ns |
Forward Transconductance - Min | 12 S, 7 S | Height | 0.75 mm |
Length | 2.05 mm | Product Type | MOSFET |
Rise Time | 21 ns, 25 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time | 12 ns, 20 ns | Typical Turn-On Delay Time | 10 ns, 20 ns |
Width | 2.05 mm | Part # Aliases | SIA519EDJ-GE3 |
Unit Weight | 0.000988 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIA519EDJ-T1-GE3 chip is a power MOSFET transistor that is designed for use in various electronic devices. It ensures efficient power management and is able to handle high energy loads. This chip has low voltage and low on-resistance characteristics, making it suitable for a wide range of applications such as inverters, motor control, and power supplies.
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Features
SIA519EDJ-T1-GE3 is a surface mount RF power amplifier with integrated power detector. It operates at frequencies ranging from 700MHz to 3800MHz, providing high linearity and efficiency to support wireless communication systems. With its compact size, it is suitable for various applications such as cellular base stations, repeaters, and small cell systems. -
Pinout
The SIA519EDJ-T1-GE3 has a pin count of 5. It is a voltage detector IC with a built-in delay circuit and a threshold voltage of 2.0V. -
Manufacturer
The manufacturer of the SIA519EDJ-T1-GE3 is Sanken Electric Co., Ltd. It is a Japanese company that specializes in the development and manufacturing of power and energy-related electronics components and systems. -
Application Field
The SIA519EDJ-T1-GE3 is a MOSFET transistor that is commonly used in various applications such as power supplies, motor control, audio amplifiers, and general-purpose switching circuits. Its high voltage and current handling capabilities make it suitable for a wide range of electronic devices. -
Package
The SIA519EDJ-T1-GE3 chip is available in a surface mount package, specifically in a SC-89 (SOT-490) form. Its size is typically around 2.1 mm x 1.6 mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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