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vishay SI2325DS-T1-GE3
P-Channel 150 V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Brands: VISHAY
Mfr.Part #: SI2325DS-T1-GE3
Datasheet: SI2325DS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23
RoHS Status:
Stock Condition: 21000 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.353 | $0.353 |
| 10 | $0.306 | $3.060 |
| 30 | $0.286 | $8.580 |
| 100 | $0.262 | $26.200 |
| 500 | $0.249 | $124.500 |
| 1000 | $0.243 | $243.000 |
In Stock:21000 PCS
SI2325DS-T1-GE3 General Description
P-Channel 150 V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
| Id - Continuous Drain Current | 530 mA | Rds On - Drain-Source Resistance | 1.2 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Qg - Gate Charge | 7.7 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 750 mW |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 11 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 11 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 16 ns |
| Typical Turn-On Delay Time | 7 ns | Width | 1.6 mm |
| Part # Aliases | SI2325DS-T1-BE3 SI2325DS-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI2325DS-T1-GE3 is a chip that belongs to the MOSFET (metal-oxide-semiconductor field-effect transistor) family. It is designed to provide efficient power management and control in various electronic devices. The chip's features include low on-resistance, fast switching speed, and low capacitance. It can be used in applications such as power supplies, motor control, and battery charging to enhance performance and energy efficiency.
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Equivalent
Some equivalent products of the SI2325DS-T1-GE3 chip are the SI2304DS-T1-GE3, SI2323DS-T1-GE3, and SI2343DS-T1-GE3 chips. -
Features
The SI2325DS-T1-GE3 is a 2.5V N-Channel power MOSFET. It features low on-resistance, high current handling capability, and low gate drive requirements. It is designed for use in power management applications, such as battery chargers, DC-DC converters, and power supplies. -
Pinout
The SI2325DS-T1-GE3 is an N-channel MOSFET with a 6-pin count. The function of this device is to act as a switch or amplifier in electronic circuits, commonly used in power management applications. -
Manufacturer
The manufacturer of the SI2325DS-T1-GE3 is Vishay Siliconix. Vishay Siliconix is a multinational company that specializes in manufacturing discrete semiconductors and passive electronic components. They offer a wide range of products including power MOSFETs, diodes, rectifiers, and optoelectronic components. -
Application Field
The SI2325DS-T1-GE3 is a high-performance MOSFET transistor suitable for a variety of applications including power management, low voltage switching, and battery charging circuits. With its low on-state resistance and small package size, it is commonly used in portable devices, consumer electronics, and automotive applications. -
Package
The SI2325DS-T1-GE3 chip has a package type of SOT-23, a compact form with three pins, and a small size of 2.94mm x 1.3mm x 1.1mm.
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