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vishay SIR638DP-T1-GE3
Designed for power-centric applications, this N-channel MOSFET offers a 40V voltage threshold and can handle currents up to 100A
Brands: Vishay
Mfr.Part #: SIR638DP-T1-GE3
Datasheet: SIR638DP-T1-GE3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.436 | $0.436 |
| 10 | $0.428 | $4.280 |
| 30 | $0.421 | $12.630 |
| 100 | $0.416 | $41.600 |
In Stock:9458 PCS
SIR638DP-T1-GE3 General Description
The SIR638DP-T1-GE3 is a 60V N-channel MOSFET with a drain-to-source voltage of 60V and a continuous drain current of 34A. It features an ultra-low on-resistance of 6.9mΩ at 10V gate-to-source voltage, making it suitable for high-efficiency power management applications. This MOSFET is designed with a small form factor package, specifically a PowerPAK® SO-8, to provide high power density and thermal performance in a compact footprint. It also has a low gate charge of 26nC and a fast switching performance, enabling efficient and reliable operation in high-frequency applications. The SIR638DP-T1-GE3 is ideally suited for a wide range of applications, including power supplies, motor control, battery management systems, and load switching. Its high current handling capability and low on-resistance help to minimize power losses and improve overall system efficiency. Additionally, this MOSFET is lead (Pb)-free and RoHS compliant, making it environmentally friendly and suitable for use in various industries where regulatory compliance is required.
Features
- Suitable for high-speed switching applications
- Low total gate charge
- Enhanced efficiency
- Low gate-source charge
- Fast switching speed
- RoHS compliant
Application
- Power management systems
- High efficiency DC-DC converters
- Voltage regulators
- LCD and LED backlighting
- Automotive electronics
- Industrial control systems
- Telecommunications equipment
- Computing devices
- Consumer electronics
- LED lighting applications
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 880 uOhms | Vgs - Gate-Source Voltage | - 16 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.3 V | Qg - Gate Charge | 204 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
| Tradename | TrenchFET, PowerPAK | Series | SIR |
| Brand | Vishay / Siliconix | Configuration | Single |
| Fall Time | 10 ns | Product Type | MOSFET |
| Rise Time | 21 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Typical Turn-Off Delay Time | 52 ns |
| Typical Turn-On Delay Time | 20 ns |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIR638DP-T1-GE3 chip is a power MOSFET designed by Vishay. It features a low on-resistance and a small form factor package. This chip is suitable for various power management applications, including battery chargers, power supplies, and DC-DC converters. It offers high efficiency and reliability, making it an ideal choice for different electronic devices.
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Equivalent
There are no direct equivalent products to the SIR638DP-T1-GE3 chip. However, similar alternative options include SIR577DP-T1-GE3 and SIR662DP-T1-GE3 chips, which offer comparable features and specifications. -
Features
The SIR638DP-T1-GE3 features a low on-resistance, high-speed switch, and a small package. It is designed for use in various applications, including load switching and DC-DC converters, to enhance system efficiency and reliability. Additionally, it offers excellent thermal performance, which helps to minimize power losses and optimize power conversion. -
Pinout
The SIR638DP-T1-GE3 is a dual P-channel MOSFET with a pin count of 6. It is commonly used for power management and load switching applications. -
Manufacturer
The manufacturer of the SIR638DP-T1-GE3 is Vishay Intertechnology. It is a global company that designs, manufactures, and supplies discrete semiconductors and passive electronic components for a wide range of industries including automotive, telecommunications, consumer electronics, and more. -
Application Field
The SIR638DP-T1-GE3 is a high-speed switching diode commonly used in applications such as voltage clamping, high-speed switching circuits, and RF generators. Its small form factor and high-speed characteristics make it suitable for compact electronic devices and communications equipment. -
Package
The SIR638DP-T1-GE3 chip has a package type of DPAK-2 and a package form of Q-Outline. The dimensions of the package are approximately 6.73mm x 6.57mm x 2.72mm, making it a relatively small-sized chip.
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