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vishay SI7178DP-T1-GE3
High-power MOSFET with 100V voltage rating, 60A current rating, and 104W power dissipation, featuring a low resistance of 14mohm at 10V
Brands: Vishay
Mfr.Part #: SI7178DP-T1-GE3
Datasheet: SI7178DP-T1-GE3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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N CHANNEL MOSFET, 100V, 60A, PowerPAK; T; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:6.25W; Operating Temperature Range:-55°C to +150°C; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:104W; Power Dissipation Pd:6.25W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
Features
- - Single-channel, N-channel, enhancement-mode, metal oxide, MOSFET transistor
- - PowerPAKR SO-8 package
- - Typical turn-off delay time of 27 ns
- - Rise-time of 10 ns
- - Operating temperature range of -55 C
Application
SWITCHINGSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 60 A |
| Rds On - Drain-Source Resistance | 14 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V | Qg - Gate Charge | 47.5 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SI7 |
| Brand | Vishay Semiconductors | Configuration | Single |
| Fall Time | 11 ns | Forward Transconductance - Min | 28 S |
| Product Type | MOSFET | Rise Time | 10 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time | 21 ns | Part # Aliases | SI7178DP-GE3 |
| Unit Weight | 0.017870 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI7178DP-T1-GE3 is a chip manufactured by Vishay Intertechnology. It is a high-precision, low-power, analog temperature sensor. The chip offers accuracy and stability, making it ideal for various applications, including industrial and automotive systems, consumer electronics, and more. It operates with a wide voltage range and provides a digital output for easy integration into microcontrollers or other devices.
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Equivalent
There are several equivalent products to the SI7178DP-T1-GE3 chip, including the SI7178DP-T1-GE3/A, SI7178DP-T3-GE3, SI7178DP-T3-GE3/A, and SI7178DP-T1-E3. -
Features
The SI7178DP-T1-GE3 is a power MOSFET that operates at a voltage supply range of -20V to 40V. It has a low on-resistance, high current capacity, and good thermal performance. The device is suitable for use in automotive and industrial applications due to its high reliability and efficiency. -
Pinout
The SI7178DP-T1-GE3 is a dual N-channel MOSFET with 8 pins. It is commonly used in power management applications. The pin count and function include gate (G), source (S), drain (D), and substrate (BS). Additional pins may include thermal pad (TP), feedback (FB), enable (EN), and voltage reference (VR). -
Manufacturer
The manufacturer of the SI7178DP-T1-GE3 is Vishay Siliconix. Vishay Siliconix is an American company that specializes in the design and production of a wide range of semiconductors and electronic components, including power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) like the SI7178DP-T1-GE3. -
Application Field
The SI7178DP-T1-GE3 is a high-speed, low-power, low-voltage differential signal conditioner. It is commonly used in various applications such as data communication systems, high-speed serial links, embedded systems, and general-purpose digital signal conditioning. -
Package
The package type of the SI7178DP-T1-GE3 chip is a DPAK (TO-252) package. The form is surface mount. The size of the chip is approximately 6.65mm x 9.35mm x 2.29mm.
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