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vishay SI4126DY-T1-GE3
Single N-Channel 30 V 0.00275 Ohm Surface Mount Power Mosfet - SOIC-8
Brands: Vishay
Mfr.Part #: SI4126DY-T1-GE3
Datasheet: SI4126DY-T1-GE3 Datasheet (PDF)
Package/Case: SOIC-8
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.342 | $1.342 |
| 10 | $1.151 | $11.510 |
| 30 | $1.044 | $31.320 |
| 100 | $0.924 | $92.400 |
| 500 | $0.871 | $435.500 |
| 1000 | $0.848 | $848.000 |
In Stock:9458 PCS
SI4126DY-T1-GE3 General Description
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:39000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
Features
Application
- Low-Side DC/DC Conversion - Notebook - Gaming
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Vishay | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOIC-8 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V | Id - Continuous Drain Current: | 39 A |
| Rds On - Drain-Source Resistance: | 2.75 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V | Qg - Gate Charge: | 70 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 7.8 W | Channel Mode: | Enhancement |
| Tradename: | TrenchFET | Series: | SI4 |
| Packaging: | MouseReel | Brand: | Vishay Semiconductors |
| Configuration: | Single | Fall Time: | 10 ns |
| Forward Transconductance - Min: | 75 S | Product Type: | MOSFET |
| Rise Time: | 10 ns | Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 43 ns | Typical Turn-On Delay Time: | 15 ns |
| Part # Aliases: | SI4126DY-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI4126DY-T1-GE3 is a chip developed by Vishay. It is a P-channel MOSFET transistor with a compact and efficient design. The chip features low on-resistance, making it suitable for high-current applications. With a small footprint, high power density, and excellent thermal performance, the SI4126DY-T1-GE3 chip is widely used in various electronic devices and power management systems.
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Features
The SI4126DY-T1-GE3 is a power MOSFET device designed for high-speed switching applications. It features a low gate charge to minimize switching losses and increase efficiency. The device has a low on-resistance and is capable of handling high currents, making it suitable for various power management applications. -
Pinout
The SI4126DY-T1-GE3 is a dual N-channel MOSFET. It has 8 pins and the pin functions are as follows: Pin 1 - Gate 1, Pin 2 - Source 1, Pin 3 - Drain 1, Pin 4 - Source 2, Pin 5 - Gate 2, Pin 6 - Drain 2, Pin 7 - 4.5 V, and Pin 8 - 4.5 V. -
Manufacturer
The manufacturer of the SI4126DY-T1-GE3 is Vishay Siliconix. It is a leading manufacturer of power semiconductor devices and passive electronic components. The company specializes in designing, manufacturing, and supplying a wide range of high-performance components for various industries, including automotive, consumer electronics, telecommunications, and more. -
Application Field
The SI4126DY-T1-GE3 is a power MOSFET used for switching applications in various electronic devices such as laptops, desktop computers, servers, and industrial systems. It can also be used in power supply circuits, motor control applications, and LED lighting systems. Overall, it finds application in a wide range of devices requiring high power switching capabilities. -
Package
The SI4126DY-T1-GE3 chip has a package type of SO-8, a surface mount form, and a size of 4.9 mm x 6.3 mm.
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