vishay SI2318DS-T1-E3
SI2318DS-T1-E3 MOSFET can handle up to 250uA
Brands: Vishay
Mfr.Part #: SI2318DS-T1-E3
Datasheet: SI2318DS-T1-E3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $0.251 | $0.251 |
10 | $0.217 | $2.170 |
30 | $0.203 | $6.090 |
100 | $0.185 | $18.500 |
500 | $0.176 | $88.000 |
1000 | $0.172 | $172.000 |
In Stock:9458 PCS
SI2318DS-T1-E3 General Description
N-Channel 40 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Features
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET® Power MOSFET
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 3.9 A | Rds On - Drain-Source Resistance | 45 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 15 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 15 ns |
Forward Transconductance - Min | 11 S | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 12 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 5 ns |
Width | 1.6 mm | Part # Aliases | SI2318DS-T1-BE3 SI2318DS-T1 |
Unit Weight | 0.000282 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI2318DS-T1-E3 is a power MOSFET chip developed by Vishay, a semiconductor manufacturer. It is designed for high-speed switching applications in power supplies, motor control, and DC-DC converters. With its low ON-resistance and compact SOT-23 package, it offers efficient power management and improved performance in electronic devices.
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Equivalent
Some equivalent products of the SI2318DS-T1-E3 chip include AO3401, AO3402, BS270, BS270C, and SSF2305. -
Features
SI2318DS-T1-E3 is a P-channel MOSFET with a drain-source voltage rating of -30V and a maximum continuous drain current of -6.6A. It has a low on-state resistance of 33mΩ and a gate threshold voltage range of -1V to -2.5V. The device is suitable for applications requiring efficient power management and voltage level shifting. -
Pinout
The SI2318DS-T1-E3 is a dual N-channel MOSFET with a pin count of 6. It is used as a switch in electronic circuits to control the flow of current. The function of the MOSFET is to amplify and switch electronic signals and power. It is commonly used in power management and voltage regulation applications. -
Manufacturer
The manufacturer of the SI2318DS-T1-E3 is Vishay Siliconix. Vishay Siliconix is a company that specializes in the design, manufacture, and marketing of a wide range of discrete and integrated semiconductor products. They offer solutions for applications in various industries such as automotive, consumer electronics, telecommunications, and more. -
Application Field
The SI2318DS-T1-E3 is a high-efficiency power MOSFET used in various applications such as portable devices, battery chargers, power management systems, and LED lighting. It offers low gate charge, low on-resistance, and compact size, making it well-suited for space-constrained applications requiring reliable power performance. -
Package
The SI2318DS-T1-E3 chip has a package type of SOT-23. The form is surface mount and the size is very small, measuring 3.00mm x 1.40mm x 1.10mm.
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