vishay SI2319CDS-T1-GE3
Metal-Oxide Semiconductor Transistor for Low-Power Applications
Brands: Vishay
Mfr.Part #: SI2319CDS-T1-GE3
Datasheet: SI2319CDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
Add To BomSI2319CDS-T1-GE3 General Description
MOSFET,P CH,40V,4.4A,DIODE,SOT23; Transistor Polarity:P Channel; Drain Source Voltage Vds:-40V; On State Resistance:0.064ohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:-20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-3.1A; Power Dissipation:1.25W
Features
- Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
Application
SWITCHINGSpecifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 4.4 A | Rds On - Drain-Source Resistance | 77 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 21 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 8 ns |
Height | 1.45 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 9 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 8 ns | Width | 1.6 mm |
Part # Aliases | SI2319CDS-T1-BE3 SI2319CDS-GE3 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
Step1 :Product
-
Step2 :Vacuum packaging
-
Step3 :Anti-static bag
-
Step4 :Individual packaging
-
Step5 :Packaging boxes
-
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The SI2319CDS-T1-GE3 chip is a power MOSFET designed for use in various electronics applications. It features a compact size, low on-resistance, and high efficiency, making it ideal for power management in portable devices, consumer electronics, and industrial equipment. It offers high performance and reliable operation in a small form factor.
-
Equivalent
The equivalent products of SI2319CDS-T1-GE3 chip are SI2319CDS-T1-E3, SI2319CDS-T1-GE3, SI2319CDS-T1-GE (Discontinued), SI2319CDS-T1-E3 (Discontinued). -
Features
SI2319CDS-T1-GE3 is a P-channel enhancement mode Field Effect Transistor (FET) with a 30V drain-source voltage rating and ±12A drain current rating. It is RoHS-compliant, has low on-resistance, and is suitable for use in various power management applications. -
Pinout
The SI2319CDS-T1-GE3 is a dual N-channel MOSFET with a pin count of 6. It functions as a high-speed switching device in a variety of applications, including power management, load switches, and battery management systems. -
Manufacturer
Vishay Siliconix is the manufacturer of the SI2319CDS-T1-GE3. They are a global company specializing in the design and manufacturing of discrete semiconductors and passive electronic components. They focus on creating innovative solutions for a wide range of industries, including automotive, telecommunications, and consumer electronics. -
Application Field
The SI2319CDS-T1-GE3 is commonly used in various applications including power management, load switching, battery charging, and motor control. It is suitable for use in products such as smartphones, tablets, laptops, power tools, and other portable electronic devices that require high efficiency power switching and control. -
Package
The SI2319CDS-T1-GE3 chip is a surface mount package type with a form of SOT-23 and a size of 2.9mm x 1.3mm x 1.3mm.
We provide high quality products, thoughtful service and after sale guarantee
-
We have rich products, can meet your various needs.
-
Minimum order quantity starts from 1pcs.
-
Lowest international shipping fee starts from $0.00
-
365 days quality guarantee for all products