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SI2365EDS-T1-GE3
20V Power P Channel SOT-23-3 MOSFETs
Brands: Vishay
Mfr.Part #: SI2365EDS-T1-GE3
Datasheet: SI2365EDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 7177 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MOSFET, P-CH, -20V, -5.9A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.9A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0265ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Features
Application
Power Management for Portable and Consumer - Load Switches - DC/DC ConvertersSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 5.9 A | Rds On - Drain-Source Resistance | 26.5 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 13.8 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 14 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 21 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 62 ns |
| Typical Turn-On Delay Time | 22 ns | Width | 1.6 mm |
| Part # Aliases | SI2365EDS-T1-BE3 SI4816DY-T1-E3-S |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2365EDS-T1-GE3 chip is an advanced power MOSFET designed for use in a wide range of applications, such as power management and load switching. It offers low on-resistance and high current-handling capability, making it suitable for high-efficiency power conversion. This chip is compact, reliable, and efficient, making it an excellent choice for modern electronic devices.
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Equivalent
Equivalent products of the SI2365EDS-T1-GE3 chip include SI2306BDS-T1-GE3, SI2306EDS-T1-GE3, NDS336P-T1G, and NDS8434-T1G. -
Features
SI2365EDS-T1-GE3 is a device with a low on-resistance of 4.5mΩ, ideal for power management applications. It has a compact SOT-23 package, making it suitable for space-constrained designs. It operates efficiently at a high voltage range between -20V to 20V. The device is designed with a low threshold voltage and fast switching speed for enhanced performance. -
Pinout
The SI2365EDS-T1-GE3 is a small-scale transistor with a SOT-23 package. It has three pins and performs as a dual N/P-channel MOSFET switch for low-voltage applications. -
Manufacturer
The manufacturer of the SI2365EDS-T1-GE3 is Vishay Siliconix. Vishay Siliconix is a semiconductor company that primarily focuses on manufacturing power MOSFETs and analog switches. They produce a wide range of electronic components for various industries, including automotive, telecommunications, consumer electronics, and industrial applications. -
Application Field
The SI2365EDS-T1-GE3, a dual N-channel 20V MOSFET, is commonly used in applications that require efficient power management and switching circuits such as battery-powered devices, portable electronics, and consumer electronics. It is also suitable for various power conversion and management applications in automotive, industrial, and communication systems.
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