NEXPERIA BSS84,215

Part points

• The BSS84 is a small signal N-channel MOSFET transistor used for switching applications. It has a maximum drain-source voltage of 50V and a continuous drain current of 130mA. The BSS215 is a dual common-source N-channel MOSFET transistor with a common drain connection. Both chips are commonly used in low power applications, such as in mobile devices or voltage regulation circuits.

• Equivalent

  BSS84,215 is an N-channel enhancement mode field-effect transistor. Equivalent products include IRF7304PBF, MMBFJ310LT1G, and ZVP3310A.

• Features

  BSS84,215 is a N-channel enhancement mode field-effect transistor. It has a Vds voltage of 50V, Id continuous drain current of 0.13A, Rds(on) resistance of 1.6 ohms, and a low threshold voltage of 1V. It is suitable for low voltage switching applications in portable devices.

• Pinout

  The BSS84,215 is a SOT-23 N-channel enhancement mode field-effect transistor with a pin count of 3. Pin functions are: pin 1 (source), pin 2 (gate), and pin 3 (drain). It is commonly used for switching and amplification applications in low voltage circuits.

• Manufacturer

  BSS84,215 is manufactured by Philips Semiconductors, a multinational semiconductor manufacturer. Philips Semiconductors is a division of Philips, a Dutch conglomerate that produces a wide range of products including consumer electronics, lighting, and healthcare equipment. They are known for their high-quality semiconductor products used in various electronic applications.

• Application Field

  BSS84 can be used in low-power switching applications, such as in portable electronics, as well as in current and voltage level shifter circuits. BSS215 is ideal for low-voltage applications, such as power management and battery-operated devices. Both can also be used in general purpose amplification and switching applications in various electronic devices.

• Package

  The BSS84,215 chip is a SOT-23 package type with a TO-236AB form. It has a size of 2.9mm x 1.3mm x 1.3mm.