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vishay SISS27DN-T1-GE3
Power-efficient P-channel MOSFET with -30V voltage rating and 5.6mOhm resistance at 10V
Brands: Vishay
Mfr.Part #: SISS27DN-T1-GE3
Datasheet: SISS27DN-T1-GE3 Datasheet (PDF)
Package/Case: PowerPAK-1212-8
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.587 | $0.587 |
| 10 | $0.481 | $4.810 |
| 30 | $0.428 | $12.840 |
| 100 | $0.376 | $37.600 |
| 500 | $0.337 | $168.500 |
| 1000 | $0.319 | $319.000 |
In Stock:9458 PCS
SISS27DN-T1-GE3 General Description
P-Channel 30 V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Features
TrenchFET® Power MOSFET |Low thermal resistance PowerPAK® package with small size and low 0.75 mm profile |100 % Rg and UIS tested |Material categorization: For definitions of compliance please see www.vishay.com/doc?99912Application
Notebook computers and mobile S computing - Adaptor switch - Load switch G - DC/DC converter - Power managementSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | PowerPAK-1212-8 |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 50 A |
| Rds On - Drain-Source Resistance | 5.6 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 92 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 57 W | Channel Mode | Enhancement |
| Tradename | TrenchFET, PowerPAK | Series | SIS |
| Brand | Vishay Semiconductors | Configuration | Single |
| Fall Time | 10 ns | Forward Transconductance - Min | 52 S |
| Product Type | MOSFET | Rise Time | 5 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 65 ns |
| Typical Turn-On Delay Time | 16 ns |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SISS27DN-T1-GE3 is a power MOSFET produced by Vishay. It is designed for high efficiency and low conduction losses in power management applications. The chip features a low on-resistance and fast switching speeds, making it suitable for use in DC-DC converters, synchronous rectification, and motor control circuits.
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Equivalent
The SISS27DN-T1-GE3 chip's equivalents include the Infineon BSC016N04LS, ON Semiconductor NVTFS5826N, and Fairchild FDMF5820DC. These MOSFETs share similar specifications and are commonly used in power management applications. -
Features
SISS27DN-T1-GE3 is a power MOSFET with a 30V drain-source voltage and 27A continuous drain current. It features a low on-resistance of 7mΩ, a small form factor, and efficient thermal management. This MOSFET is suitable for a variety of high-power applications requiring low power loss and high efficiency. -
Pinout
The SISS27DN-T1-GE3 is a dual N-channel 30V MOSFET with a total of 8 pins. Pin functions include gate (G), drain (D), and source (S) for each MOSFET. Other pins may include the substrate connection (SUS) and thermal pad. -
Manufacturer
Vishay Intertechnology Inc. is the manufacturer of the SISS27DN-T1-GE3. It is a global semiconductor manufacturer specializing in passive electronic components and discrete semiconductors. Vishay Intertechnology Inc. is known for its high-quality products and innovative solutions for a wide range of industries, including automotive, industrial, and consumer electronics. -
Application Field
The SISS27DN-T1-GE3 is commonly used in power management applications such as DC-DC converters, synchronous buck converters, and battery chargers. Its features, including low on-resistance and fast switching capabilities, make it suitable for various power supply designs in industries like automotive, telecommunications, and consumer electronics. -
Package
The SISS27DN-T1-GE3 chip is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in a DFN (Dual Flat No-leads) form. Its size typically ranges around 2mm x 2mm.
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