vishay SIS443DN-T1-GE3

Part points

• The SIS443DN-T1-GE3 is a high-performance, low-power dual channel signal integrity IC for use in optical communication systems. It features integrated signal conditioning, equalization, and diagnostics capabilities, making it ideal for high-speed data transmission applications. The chip is designed to provide reliable and efficient signal processing, ensuring robust performance in demanding communication environments.

• Equivalent

  Some equivalent products of the SIS443DN-T1-GE3 chip are the IRF3205, IRF1405, and IRF5305. These chips are also power MOSFETs with similar specifications and applications in power management and switching circuits.

• Features

  - 30V N-Channel MOSFET - Low on-resistance of 2.5m Ohm - Low gate charge of 29nC - High power density in a DFN 3x3 package - Suitable for synchronous rectification, battery protection, and load switch applications.

• Pinout

  SIS443DN-T1-GE3 is a 10-pin dual N-channel MOSFET. Pin configuration: 1. Source 1 2. Gate 1 3. Drain 1 4. Source 2 5. Gate 2 6. Drain 2 7. Source 3 8. Gate 3 9. Drain 3 10. Gnd. Functions as a high-speed switching device in various electronic applications.

• Manufacturer

  The manufacturer of SIS443DN-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a company that produces a wide range of electronic components, including resistors, capacitors, and sensors. They are a global leader in the industry, known for their high-quality products and innovative technologies.

• Application Field

  SIS443DN-T1-GE3 is commonly used in automotive, industrial, and consumer applications requiring high-performance MOSFETs. This includes power management, motor control, battery management, and lighting applications where efficiency, reliability, and ruggedness are critical.

• Package

  The SIS443DN-T1-GE3 chip comes in a surface mount package type (SMD/SMT), in a dual N-Channel MOSFET form. The size of the chip is 3.3mm x 3.3mm x 0.85mm.