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vishay SIRA24DP-T1-GE3
N-Channel 25 V (D-S) MOSFET
Brands: Vishay
Mfr.Part #: SIRA24DP-T1-GE3
Datasheet: SIRA24DP-T1-GE3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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N-Channel 25 V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8
Features
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Vishay | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | PowerPAK-SO-8 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 25 V | Id - Continuous Drain Current: | 60 A |
| Rds On - Drain-Source Resistance: | 1.15 mOhms | Vgs - Gate-Source Voltage: | - 16 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V | Qg - Gate Charge: | 55 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 62.5 W | Channel Mode: | Enhancement |
| Tradename: | TrenchFET, PowerPAK | Series: | SIR |
| Packaging: | MouseReel | Brand: | Vishay / Siliconix |
| Configuration: | Single | Fall Time: | 17 ns |
| Forward Transconductance - Min: | 75 S | Height: | 1.04 mm |
| Length: | 6.15 mm | Product Type: | MOSFET |
| Rise Time: | 42 ns | Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 17 ns | Typical Turn-On Delay Time: | 18 ns |
| Width: | 5.15 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIRA24DP-T1-GE3 is a power MOSFET chip designed for applications requiring efficient power management. It features a low on-resistance and high-speed switching capabilities, making it ideal for use in power supply units, motor control systems, and other high-power applications. The chip also offers protection features such as thermal shutdown and overcurrent protection, ensuring reliable and safe operation.
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Equivalent
Equivalent products to the SIRA24DP-T1-GE3 chip include the SIRA20DP-T1-GE3 and SIRA24DPT1GE3. These chips are also MOSFETs manufactured by Vishay Intertechnology. They have similar specifications and performance characteristics, making them suitable alternatives for various applications. -
Features
- Dual N-channel MOSFET - 30V Drain-Source Voltage - 24A continuous Drain Current - Low on-resistance - Low gate charge - RoHS compliant package - Suitable for use in power management applications - Ideal for DC/DC converters, motor drives, and battery management systems. -
Pinout
The SIRA24DP-T1-GE3 is a dual P-channel MOSFET with a small SC-75 package. It has 5 pins, with the functions being gate (G), source (S), drain 1 (D1), drain 2 (D2), and substrate (S). It is commonly used in battery protection circuits and power management applications. -
Manufacturer
The SIRA24DP-T1-GE3 is manufactured by Vishay Intertechnology, a global manufacturer of electronic components and semiconductors. Vishay is a leading company in the field of passive and active electronic components used in a wide range of devices and applications, including industrial, automotive, consumer electronics, and telecommunications. -
Application Field
The SIRA24DP-T1-GE3 is a dual P-channel MOSFET specifically designed for power management applications in portable electronics, battery-powered devices, and low voltage circuits. It is commonly used in applications such as load switches, power switches, and battery protection circuits due to its low on-resistance and high efficiency. -
Package
The SIRA24DP-T1-GE3 chip comes in a Surface Mount (SMD) package type with a Dual P-Channel MOSFET form. It has a size of 1.5mm x 1mm.
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