vishay SIR836DP-T1-GE3

Part points

• The SIR836DP-T1-GE3 is a power MOSFET chip designed for high efficiency and high-power applications. It offers low on-resistance and a high current rating, making it suitable for use in power management and control circuits. This chip is commonly used in power supplies, motor control, and automotive applications.

• Equivalent

  Some equivalent products of SIR836DP-T1-GE3 chip include Infineon BSC800N08NS3G, Vishay SiR804DP, and ON Semiconductor FDD6637. These chips are all N-channel MOSFETs with similar specifications and performance capabilities.

• Features

  SIR836DP-T1-GE3 is a dual N-channel power MOSFET featuring a low input capacitance, low gate charge, and fast switching speed. It is suitable for high-speed switching applications and offers high efficiency and reliability. It has a compact package design for space-saving in various power electronics applications.

• Pinout

  The SIR836DP-T1-GE3 is a power MOSFET with a pin count of 5. The functions of its pins are Gate (G), Drain (D), Source (S), and two source pins (S2 and S3) for better thermal performance. It is commonly used in power supply applications.

• Manufacturer

  The manufacturer of SIR836DP-T1-GE3 is Vishay Semiconductor GmbH, a semiconductor company known for producing a wide range of electronic components such as capacitors, inductors, diodes, and integrated circuits. Vishay Semiconductor GmbH also offers custom solutions and services to meet the specific needs of their customers in various industries.

• Application Field

  The SIR836DP-T1-GE3 is a power MOSFET designed for use in electronic devices that require high efficiency power management, such as DC-DC converters, synchronous buck converters, and battery protection circuits. It is commonly used in industrial, automotive, and consumer electronics applications.

• Package

  The SIR836DP-T1-GE3 chip comes in a surface mount package type. It is in the form of a PCB-mounted module and is available in a size of 3.95mm x 3.95mm x 1.0mm.