vishay SIR662DP-T1-GE3
N-channel 60V 100A Power MOSFET in 8-pin PowerPAK SO package
Brands: Vishay
Mfr.Part #: SIR662DP-T1-GE3
Datasheet: SIR662DP-T1-GE3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomSIR662DP-T1-GE3 General Description
The SIR662DP-T1-GE3 is a dual N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) from Vishay Siliconix. It is designed for high current and fast switching applications, making it ideal for power management in a variety of electronic devices.This MOSFET has a low on-resistance of 2.1 mOhm max per channel at a Vgs of 10V, allowing for efficient power transfer and reduced power dissipation. It has a maximum drain-source voltage of 30V and a continuous drain current of 55A per channel, making it suitable for high power applications.The SIR662DP-T1-GE3 is housed in a PowerPAK SO-8 package, which provides low thermal resistance and excellent thermal performance. This package also allows for easy mounting and soldering onto PCBs.Additionally, this MOSFET features a low gate charge of 7.8nC max, enabling fast switching speeds and reducing switching losses. It is designed to operate in a wide temperature range of -55°C to 175°C, making it suitable for a variety of operating conditions.
Features
- High power-handling capability
- Low RDS(on) for reduced power dissipation
- Logic level threshold
- Low threshold voltage VGS(th)
- Fully characterized capacitance and ESD
- Compatible with existing pick and place equipment
Application
- Lighting and motor control in industrial applications
- Power management in consumer electronics
- Battery management systems in electric vehicles
- Solar inverters and power supplies for renewable energy
- DC-DC converters for telecommunications equipment
- Power distribution and management in data centers
- Industrial automation and robotics
- Medical devices and equipment
- Home appliances such as air conditioners and refrigerators
- LED lighting systems for commercial and residential buildings
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 2.2 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 96 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
Tradename | TrenchFET, PowerPAK | Series | SIR |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 11 ns | Forward Transconductance - Min | 82 S |
Height | 1.04 mm | Length | 6.15 mm |
Product Type | MOSFET | Rise Time | 11 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 33 ns |
Typical Turn-On Delay Time | 14 ns | Width | 5.15 mm |
Part # Aliases | SIR662DP-GE3 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIR662DP-T1-GE3 is a high-performance, dual P-channel MOSFET chip designed for power management applications. It features low on-resistance, high current capacity, and low gate charge for efficient and reliable operation. Ideal for use in portable electronic devices, motor control systems, and other applications requiring high power handling capabilities.
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Equivalent
The equivalent products of the SIR662DP-T1-GE3 chip are IR6621SPbF, IR6721SPbF, IR6621MPbF, and IR6721MPbF. These products are also high-side MOSFET switches designed for automotive and industrial applications, offering similar functionality and performance. -
Features
SIR662DP-T1-GE3 is a P-channel MOSFET with a -30V drain-source voltage and 10A continuous drain current. It has a low on-resistance of 6.2mohm and a compact 6x5mm PowerPAK SO-8 package. The device is suitable for power management applications in automotive, industrial, and consumer electronics. -
Pinout
The SIR662DP-T1-GE3 is a Power MOSFET with a pin count of 2 and functions as a high voltage, power switch for various applications. It is commonly used in power management systems, motor control, and other high power applications due to its low on-resistance and high efficiency. -
Manufacturer
The manufacturer of the SIR662DP-T1-GE3 is Vishay Intertechnology. It is a global company that designs, manufactures, and supplies discrete semiconductors and passive electronic components for the industrial, automotive, consumer, computer, telecommunications, military, and aerospace markets. Vishay is known for its high-quality products and commitment to innovation in the electronics industry. -
Application Field
The SIR662DP-T1-GE3 is a power MOSFET ideal for use in high current, high efficiency synchronous buck converters, step-down power supplies, and motor control applications. It is also suitable for use in automotive and industrial applications where high power density and thermal performance are required. -
Package
The SIR662DP-T1-GE3 chip is a Surface Mount package type with a dual P-Channel MOSFET form. Its size is 2 mm x 2 mm x 0.55 mm.
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