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vishay SIR662DP-T1-GE3

N-channel 60V 100A Power MOSFET in 8-pin PowerPAK SO package

ISO14001 ISO9001 DUNS

Brands: Vishay

Mfr.Part #: SIR662DP-T1-GE3

Datasheet: SIR662DP-T1-GE3 Datasheet (PDF)

Package/Case: PowerPAK-SO-8

Product Type: MOSFET

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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Please submit RFQ for SIR662DP-T1-GE3 or email to us: Email: [email protected], we will contact you within 12 hours.

SIR662DP-T1-GE3 General Description

The SIR662DP-T1-GE3 is a dual N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) from Vishay Siliconix. It is designed for high current and fast switching applications, making it ideal for power management in a variety of electronic devices.This MOSFET has a low on-resistance of 2.1 mOhm max per channel at a Vgs of 10V, allowing for efficient power transfer and reduced power dissipation. It has a maximum drain-source voltage of 30V and a continuous drain current of 55A per channel, making it suitable for high power applications.The SIR662DP-T1-GE3 is housed in a PowerPAK SO-8 package, which provides low thermal resistance and excellent thermal performance. This package also allows for easy mounting and soldering onto PCBs.Additionally, this MOSFET features a low gate charge of 7.8nC max, enabling fast switching speeds and reducing switching losses. It is designed to operate in a wide temperature range of -55°C to 175°C, making it suitable for a variety of operating conditions.

Features

  • High power-handling capability
  • Low RDS(on) for reduced power dissipation
  • Logic level threshold
  • Low threshold voltage VGS(th)
  • Fully characterized capacitance and ESD
  • Compatible with existing pick and place equipment

Application

  • Lighting and motor control in industrial applications
  • Power management in consumer electronics
  • Battery management systems in electric vehicles
  • Solar inverters and power supplies for renewable energy
  • DC-DC converters for telecommunications equipment
  • Power distribution and management in data centers
  • Industrial automation and robotics
  • Medical devices and equipment
  • Home appliances such as air conditioners and refrigerators
  • LED lighting systems for commercial and residential buildings

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 2.2 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 96 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 104 W Channel Mode Enhancement
Tradename TrenchFET, PowerPAK Series SIR
Brand Vishay Semiconductors Configuration Single
Fall Time 11 ns Forward Transconductance - Min 82 S
Height 1.04 mm Length 6.15 mm
Product Type MOSFET Rise Time 11 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 14 ns Width 5.15 mm
Part # Aliases SIR662DP-GE3

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The SIR662DP-T1-GE3 is a high-performance, dual P-channel MOSFET chip designed for power management applications. It features low on-resistance, high current capacity, and low gate charge for efficient and reliable operation. Ideal for use in portable electronic devices, motor control systems, and other applications requiring high power handling capabilities.
  • Equivalent

    The equivalent products of the SIR662DP-T1-GE3 chip are IR6621SPbF, IR6721SPbF, IR6621MPbF, and IR6721MPbF. These products are also high-side MOSFET switches designed for automotive and industrial applications, offering similar functionality and performance.
  • Features

    SIR662DP-T1-GE3 is a P-channel MOSFET with a -30V drain-source voltage and 10A continuous drain current. It has a low on-resistance of 6.2mohm and a compact 6x5mm PowerPAK SO-8 package. The device is suitable for power management applications in automotive, industrial, and consumer electronics.
  • Pinout

    The SIR662DP-T1-GE3 is a Power MOSFET with a pin count of 2 and functions as a high voltage, power switch for various applications. It is commonly used in power management systems, motor control, and other high power applications due to its low on-resistance and high efficiency.
  • Manufacturer

    The manufacturer of the SIR662DP-T1-GE3 is Vishay Intertechnology. It is a global company that designs, manufactures, and supplies discrete semiconductors and passive electronic components for the industrial, automotive, consumer, computer, telecommunications, military, and aerospace markets. Vishay is known for its high-quality products and commitment to innovation in the electronics industry.
  • Application Field

    The SIR662DP-T1-GE3 is a power MOSFET ideal for use in high current, high efficiency synchronous buck converters, step-down power supplies, and motor control applications. It is also suitable for use in automotive and industrial applications where high power density and thermal performance are required.
  • Package

    The SIR662DP-T1-GE3 chip is a Surface Mount package type with a dual P-Channel MOSFET form. Its size is 2 mm x 2 mm x 0.55 mm.

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  • quantity

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