Images are for reference only See Product Specifications
vishay SIA533EDJ-T1-GE3
SIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor with 4.5 A current rating and 12 V voltage rating, in a 6-Pin SC-70 package
Brands: Vishay
Mfr.Part #: SIA533EDJ-T1-GE3
Datasheet: SIA533EDJ-T1-GE3 Datasheet (PDF)
Package/Case: SC-70-6
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
Add To BomSIA533EDJ-T1-GE3 General Description
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(On):0.028Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:6Pins Rohs Compliant: No
Features
Application
- Load Switch for Portable Devices
- DC/DC Converters
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SC-70-6 | Transistor Polarity | N-Channel, P-Channel |
| Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 12 V |
| Id - Continuous Drain Current | 4.5 A | Rds On - Drain-Source Resistance | 34 mOhms, 59 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 10 nC, 13 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 7.8 W |
| Channel Mode | Enhancement | Tradename | TrenchFET, PowerPAK |
| Series | SIA | Brand | Vishay Semiconductors |
| Configuration | Dual | Fall Time | 10 ns, 10 ns |
| Forward Transconductance - Min | 21 S, 11 S | Height | 0.75 mm |
| Length | 2.05 mm | Product Type | MOSFET |
| Rise Time | 10 ns, 15 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time | 20 ns, 25 ns | Typical Turn-On Delay Time | 10 ns, 15 ns |
| Width | 2.05 mm | Part # Aliases | SIA533EDJ-GE3 |
| Unit Weight | 0.000988 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
![Product]( "Product")
Step1 :Product
-
![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
-
![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
-
![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
-
![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
-
![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The SIA533EDJ-T1-GE3 chip is an electronic component used for power management in various applications. It offers high efficiency and reliability, making it suitable for use in mobile devices, data centers, and automotive systems. With its compact design and integrated features, this chip helps optimize power usage and improve overall system performance.
-
Features
The SIA533EDJ-T1-GE3 is a dual N-channel MOSFET, with a maximum drain current of 10A and a drain-source voltage of 30V. It is designed to provide low on-resistance and fast switching capabilities, making it suitable for high-efficiency power management applications. -
Pinout
The SIA533EDJ-T1-GE3 is a dual N-channel MOSFET transistor. It has a pin count of 8 pins and each pin serves a specific function. The exact function of each pin can vary depending on the specific pin configuration of the device. -
Manufacturer
The manufacturer of the SIA533EDJ-T1-GE3 is Vishay Siliconix. Vishay Siliconix is a semiconductor company that specializes in the design, development, and production of power MOSFETs, ICs, and other electronic components. -
Application Field
The SIA533EDJ-T1-GE3 is a dual N-channel MOSFET that can be used in various applications such as power management, voltage regulation, and switching circuits. It is commonly employed in mobile devices, portable electronics, and automotive systems where efficient power handling and high-speed switching are required. -
Package
The SIA533EDJ-T1-GE3 chip has a package type of SOD-123, a form factor of Mini-Melf, and a size of 2.1mm x 1.1mm.
We provide high quality products, thoughtful service and after sale guarantee
-
![Product]( "Product")
We have rich products, can meet your various needs.
-
![quantity]( "quantity")
Minimum order quantity starts from 1pcs.
-
![shipping]( "shipping")
Lowest international shipping fee starts from $0.00
-
![guarantee]( "guarantee")
365 days quality guarantee for all products
