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vishay SI7164DP-T1-GE3
Power Field-Effect Transistor, 23.5A current rating, 60V voltage rating, 0.00625ohm resistance, N-Channel
Brands: Vishay
Mfr.Part #: SI7164DP-T1-GE3
Datasheet: SI7164DP-T1-GE3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.580 | $1.580 |
| 10 | $1.363 | $13.630 |
| 30 | $1.243 | $37.290 |
| 100 | $1.109 | $110.900 |
| 500 | $1.049 | $524.500 |
| 1000 | $1.023 | $1023.000 |
In Stock:9458 PCS
SI7164DP-T1-GE3 General Description
MOSFET, N CH, 60V, 60A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
Features
Application
SWITCHINGSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 60 A |
| Rds On - Drain-Source Resistance | 6.25 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V | Qg - Gate Charge | 49.5 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SI7 |
| Brand | Vishay Semiconductors | Configuration | Single |
| Fall Time | 11 ns | Forward Transconductance - Min | 30 S |
| Product Type | MOSFET | Rise Time | 11 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 40 ns |
| Typical Turn-On Delay Time | 23 ns | Part # Aliases | SI7164DP-GE3 |
| Unit Weight | 0.017870 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI7164DP-T1-GE3 is a dual N-channel MOSFET power transistor designed for use in power management applications. It features low on-resistance, high current handling capability, and a compact DFN package for efficient heat dissipation. This chip is widely used in various electronic devices for power distribution and conversion.
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Equivalent
Equivalent products of SI7164DP-T1-GE3 chip are SI7165DP-T1-GE3, SI7166DP-T1-GE3, and SI7167DP-T1-GE3. These chips are also dual P-channel 30V MOSFETs in a PowerPAK® SO-8 package and offer similar features and specifications. -
Features
1. Dual-channel high-side power switch with integrated FETs 2. Wide operating voltage range of 2.5V to 5.5V 3. Overcurrent protection and thermal shutdown 4. I2C control interface for easy integration 5. Fast response time for efficient power switching 6. Small footprint with a compact package size of 3mm x 3mm. -
Pinout
The SI7164DP-T1-GE3 is a dual channel MOSFET driver IC with 8 pins. It is designed to drive MOSFETs in high-speed switching applications such as power supplies and motor controls. It provides gate drive voltages of up to 28V and can source and sink currents of up to 4A. -
Manufacturer
The manufacturer of the SI7164DP-T1-GE3 is Vishay Intertechnology, Inc. It is an American company specializing in electronic components and related products. Vishay Intertechnology is a global leader in manufacturing a wide range of discrete semiconductors, passive components, and integrated circuits for various industries including automotive, telecommunications, consumer electronics, and industrial applications. -
Application Field
The SI7164DP-T1-GE3 is commonly used in a variety of applications including automotive, industrial, and telecommunications. It is used for power management, battery monitoring, and switching in a wide range of electronic devices to provide protection and control functions for efficient operation. -
Package
The SI7164DP-T1-GE3 chip comes in a DFN-10 package type, in the form of a surface-mount device. The size of the chip is 3mm x 3mm.
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