vishay SI7113DN-T1-E3
MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
Brands: Vishay
Mfr.Part #: SI7113DN-T1-E3
Datasheet: SI7113DN-T1-E3 Datasheet (PDF)
Package/Case: PowerPAK-1212-8
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; Power Dissipation:3.7W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI7113DN-T1-E3.
Features
- 4.5V to 24V Input Voltage Range
- 6A Output Current
- 45mΩInternal High Side N-MOSFET
- Current Mode Control
- 600kHz Switching Frequency
- Adjustable Output from 0.8V to 15V
- Up to 95% Efficiency
- Internal Compensation
- Stable with Ceramic Capacitors
- Synchronous External Clock : 300kHz to 1.5MHz
- Cycle-by-Cycle Current Limit
- Input Under Voltage Lockout
- Output Under Voltage Protection
- Power Good Indicator
- Thermal Shutdown Protection
- RoHS Compliant and Halogen Free
Application
Active Clamp in Intermediate DC/DC Power SuppliesSpecifications
Parameter | Value | Parameter | Value |
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Manufacturer: | Vishay | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | PowerPAK-1212-8 |
Transistor Polarity: | P-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 13.2 A |
Rds On - Drain-Source Resistance: | 134 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V | Qg - Gate Charge: | 35 nC |
Minimum Operating Temperature: | - 50 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 52 W | Channel Mode: | Enhancement |
Tradename: | TrenchFET | Series: | SI7 |
Packaging: | MouseReel | Brand: | Vishay Semiconductors |
Configuration: | Single | Fall Time: | 10 ns |
Forward Transconductance - Min: | 25 S | Height: | 1.04 mm |
Length: | 3.3 mm | Product Type: | MOSFET |
Rise Time: | 13 ns | Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs | Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 42 ns | Typical Turn-On Delay Time: | 11 ns |
Width: | 3.3 mm | Part # Aliases: | SI7113DN-E3 |
Unit Weight: | 0.032487 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI7113DN-T1-E3 is a synchronous buck converter IC designed for use in various power management applications. It features high efficiency and a wide input voltage range, making it suitable for a range of devices including smartphones, tablets, and portable electronics. The chip also offers overcurrent protection and thermal shutdown functionality for added reliability.
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Equivalent
The equivalent products of SI7113DN-T1-E3 chip are SI7113DN-T1-GE3, SI7113DN-T1-E3, SI7113DN-T1-E3-ND, and SI7113DN-T1-GE3-ND. -
Features
SI7113DN-T1-E3 is a 60V N-channel TrenchFET power MOSFET with low RDS(on) of 11.1mΩ at VGS of 10V. It has a small footprint DFN package and is RoHS compliant. Other features include a high current handling capability, low power consumption, and high efficiency, making it suitable for a wide range of applications. -
Pinout
The SI7113DN-T1-E3 is a dual N-channel MOSFET IC with 8 pins. It is used for power management in various applications, including DC-DC conversion, load switching, and motor control. It features a low on-resistance and can handle high current levels efficiently. -
Manufacturer
The manufacturer of SI7113DN-T1-E3 is Vishay Siliconix. Vishay Siliconix is a semiconductor company that designs, manufactures, and supplies power management components and analog switches for a variety of industries including automotive, telecommunications, and consumer electronics. -
Application Field
SI7113DN-T1-E3 is commonly used in power management applications such as load switch and voltage regulator modules. It is also suitable for battery charger and power distribution designs in smartphones, tablets, and other portable electronic devices. Additionally, it can be utilized in industrial automation and automotive systems for voltage monitoring and power control purposes. -
Package
The SI7113DN-T1-E3 chip comes in a DFN-8 package type, surface mount form, with dimensions of 2mm x 2mm x 0.85mm.
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