Images are for reference only See Product Specifications
vishay SI2369DS-T1-GE3
Product: SOT-23-packaged MOSFET capable of handling up to -30V across drain and source, with a maximum gate-source voltage of 20V
Brands: Vishay
Mfr.Part #: SI2369DS-T1-GE3
Datasheet: SI2369DS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
Add To BomSI2369DS-T1-GE3 General Description
Small Signal Field-Effect Transistor, 7.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Features
Application
For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter GSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 7.6 A | Rds On - Drain-Source Resistance | 29 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 11.4 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 6 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 4 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 38 ns |
| Typical Turn-On Delay Time | 13 ns | Width | 1.6 mm |
| Part # Aliases | SI2369DS-T1-BE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
![Product]( "Product")
Step1 :Product
-
![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
-
![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
-
![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
-
![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
-
![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
SI2369DS-T1-GE3 is a chip manufactured by Vishay Siliconix. It is a dual N-channel MOSFET designed for use in power management applications. The chip features a low on-resistance and low gate charge, making it highly efficient. It is compatible with both digital and analog applications and is commonly used in DC-DC converters, load switches, and battery protection circuits.
-
Features
The SI2369DS-T1-GE3 is a small signal N-channel MOSFET transistor. It has a drain-source voltage rating of 20V and a continuous drain current rating of 3.6A. The transistor is designed for general-purpose switching applications and offers low RDS(on) resistance and fast switching speed. -
Pinout
The SI2369DS-T1-GE3 is a dual N-channel MOSFET transistor with a package pin count of 6. The pin functions include the gate (G) pin, which controls the flow of current through the transistor, the drain (D) pin, which collects current from the transistor, and the source (S) pin, which serves as the reference point for the current flow. -
Manufacturer
The SI2369DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc., which is a global manufacturer of a wide range of electronic components and semiconductors. -
Application Field
The SI2369DS-T1-GE3 is designed for general-purpose switching applications with low on-resistance and fast switching characteristics. It can be used in various applications such as power management, load switches, battery protection, and portable devices. -
Package
The SI2369DS-T1-GE3 chip has a surface mount package type called SOT-23-3. It has three pins and a small outline package (SOP) form. The package size is approximately 2.9mm x 1.3mm x 1.1mm (L x W x H).
We provide high quality products, thoughtful service and after sale guarantee
-
![Product]( "Product")
We have rich products, can meet your various needs.
-
![quantity]( "quantity")
Minimum order quantity starts from 1pcs.
-
![shipping]( "shipping")
Lowest international shipping fee starts from $0.00
-
![guarantee]( "guarantee")
365 days quality guarantee for all products
