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vishay SI2337DS-T1-GE3
P-Channel 80 V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Brands: Vishay
Mfr.Part #: SI2337DS-T1-GE3
Datasheet: SI2337DS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.604 | $0.604 |
| 10 | $0.499 | $4.990 |
| 30 | $0.447 | $13.410 |
| 100 | $0.395 | $39.500 |
| 500 | $0.331 | $165.500 |
| 1000 | $0.316 | $316.000 |
In Stock:9458 PCS
SI2337DS-T1-GE3 General Description
P-Channel 80 V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Features
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Vishay | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOT-23-3 |
| Transistor Polarity: | P-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 80 V | Id - Continuous Drain Current: | 2.2 A |
| Rds On - Drain-Source Resistance: | 270 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V | Qg - Gate Charge: | 7 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 2.5 W | Channel Mode: | Enhancement |
| Tradename: | TrenchFET | Series: | SI2 |
| Packaging: | MouseReel | Brand: | Vishay Semiconductors |
| Configuration: | Single | Fall Time: | 15 ns |
| Height: | 1.45 mm | Length: | 2.9 mm |
| Product Type: | MOSFET | Rise Time: | 15 ns |
| Factory Pack Quantity: | 3000 | Subcategory: | MOSFETs |
| Transistor Type: | 1 P-Channel | Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 10 ns | Width: | 1.6 mm |
| Part # Aliases: | SI2337DS-T1-BE3 SI2337DS-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2337DS-T1-GE3 is a small signal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip designed for use in various electronic applications. It features a compact size, high efficiency, and low on-resistance, making it ideal for power management and switching circuits. This chip is commonly used in power supplies, battery chargers, and other electronic devices requiring efficient power control.
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Equivalent
The equivalent products of SI2337DS-T1-GE3 chip are IRF7832PBF and Si2337DS-T1-GE3-ND. -
Features
SI2337DS-T1-GE3 is a low voltage dual N/P-channel MOSFET with an enhanced mode operation. It has a high power density and a low RDS(on) for efficient power management. It can operate in a wide range of temperatures and has a compact surface mount package for easy integration into electronic circuits. -
Pinout
SI2337DS-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. Its functions include power management, battery protection, and signal amplification in portable electronics and industrial applications. -
Manufacturer
SI2337DS-T1-GE3 is manufactured by Vishay Intertechnology, a global manufacturer of electronic components founded in 1962. Vishay specializes in discrete semiconductors, passive components, and integrated circuits for a wide range of industries including automotive, industrial, computer, consumer, telecommunications, and military. They are known for their high-quality products and innovative technologies. -
Application Field
SI2337DS-T1-GE3 is typically used in applications such as power management, load switching, battery protection, and voltage regulation. It can be found in various electronic devices including smartphones, tablets, laptops, and other portable electronics where efficient power switching and management is required. -
Package
The SI2337DS-T1-GE3 chip is a surface-mount package. It comes in a dual MOSFET form with a size of 2 mm x 2 mm.
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