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vishay SI2333CDS-T1-GE3
Form Factor: Packaged in a compact SOT-23-3 package, this MOSFET offers space-saving benefits and ease of integration into circuit designs
Brands: Vishay
Mfr.Part #: SI2333CDS-T1-GE3
Datasheet: SI2333CDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.358 | $0.358 |
| 10 | $0.285 | $2.850 |
| 30 | $0.253 | $7.590 |
| 100 | $0.215 | $21.500 |
| 500 | $0.198 | $99.000 |
| 1000 | $0.187 | $187.000 |
In Stock:9458 PCS
SI2333CDS-T1-GE3 General Description
Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:7.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:2.5W; No. Of Pins:3Pins Rohs Compliant: No |Vishay SI2333CDS-T1-GE3.
Features
Application
Load Switch |PA SwitchSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 12 V |
| Id - Continuous Drain Current | 7.1 A | Rds On - Drain-Source Resistance | 35 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 9 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 12 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 35 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 13 ns | Width | 1.6 mm |
| Part # Aliases | SI2333CDS-T1-BE3 SI2333CDS-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI2333CDS-T1-GE3 is a chip/semiconductor used in electronic devices. It is a MOSFET (metal-oxide-semiconductor field-effect transistor) that can switch high currents. The chip is designed to enhance performance while reducing power consumption in various applications such as power management, battery chargers, and DC-DC converters. It offers high efficiency, compact size, and low on-resistance for improved electrical performance in electronic circuits.
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Features
SI2333CDS-T1-GE3 is a P-Channel MOSFET with a drain-source voltage rating of -20V. It has a low on-resistance, fast switching speed, and is suited for low power applications. Additionally, it has thermal protection and is RoHS compliant. -
Pinout
The SI2333CDS-T1-GE3 has a pin count of 6 and is a P-Channel MOSFET. Its function is to provide high-speed switching and efficient power management in various electronic applications. -
Manufacturer
The manufacturer of the SI2333CDS-T1-GE3 is Vishay Siliconix. Vishay Siliconix is a semiconductor company that specializes in the design, production, and distribution of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and other electronic components. -
Application Field
The SI2333CDS-T1-GE3 is a P-channel MOSFET that can be used in various applications such as power management, load switching, battery charging, and portable devices. It offers low voltage and low on-resistance, making it suitable for applications that require efficient power control and handling. -
Package
The SI2333CDS-T1-GE3 chip has a package type of SOT-23, a form of reel, and a small size.
We provide high quality products, thoughtful service and after sale guarantee
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