NXP BLF245

Part points

• The BLF245 is a power transistor chip commonly used in RF amplifier applications. It operates in the frequency range of 20 to 500 MHz and provides a power output of up to 150 watts. The chip is designed to offer high gain, low intermodulation distortion, and excellent linearity. It is widely used in radio communications, broadcasting, and other RF power amplification systems.

• Equivalent

  Some equivalent products of the BLF245 chip include the BLF248, BLF278, and MRF151G. These chips are power Mosfet transistors commonly used in RF amplifier applications.

• Features

  The BLF245 is a RF power transistor with a maximum operating frequency of 175 MHz. It is designed for use in VHF push-pull amplifiers and features high output power, low intermodulation distortion, high gain, and excellent thermal stability.

• Pinout

  The BLF245 is a power transistor typically used for HF (high-frequency) linear amplification applications. It has 3 pins: Gate, Drain, and Source. The Gate terminal is used to control the transistor's amplification, while the Drain terminal is where the amplified signal exits. The Source terminal is the ground reference for the device.

• Manufacturer

  The BLF245 is manufactured by NXP Semiconductors, a global semiconductor company specializing in electronics and digital solutions. NXP Semiconductors operates in various sectors, including automotive, industrial, mobile, and communications.

• Application Field

  The BLF245 is a power transistor mainly used in applications such as FM broadcast amplifiers, linear amplifiers, and television transmitters. It is designed for use in the 87.5–108 MHz frequency range and provides high power output in a compact form factor.

• Package

  The BLF245 chip is available in a ceramic package type called SOT1220. It comes in a single form and has a compact size of 9.4mm x 6.7mm.