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vishay SI2319DS-T1-E3

0.082 ohm on-resistance and 0.75W power dissipation capability

ISO14001 ISO9001 DUNS

Brands: Vishay

Mfr.Part #: SI2319DS-T1-E3

Datasheet: SI2319DS-T1-E3 Datasheet (PDF)

Package/Case: SOT-23-3

Product Type: MOSFET

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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Quick Quote

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SI2319DS-T1-E3 General Description

MOSFET,P CH,40V,2.3A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:-2.3A; Power Dissipation Pd:750mW; Voltage Vgs Max:-20V

Features

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 VApplications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • Specifications

    Parameter Value Parameter Value
    Product Category MOSFET RoHS Details
    Technology Si Mounting Style SMD/SMT
    Package / Case SOT-23-3 Transistor Polarity P-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V
    Id - Continuous Drain Current 3 A Rds On - Drain-Source Resistance 82 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
    Qg - Gate Charge 17 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
    Channel Mode Enhancement Tradename TrenchFET
    Series SI2 Brand Vishay Semiconductors
    Configuration Single Fall Time 25 ns
    Forward Transconductance - Min 7 S Height 1.45 mm
    Length 2.9 mm Product Type MOSFET
    Rise Time 15 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 P-Channel
    Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 7 ns
    Width 1.6 mm Part # Aliases SI2319DS-T1-BE3 SI2319DS-E3
    Unit Weight 0.000282 oz

    Shipping

    Shipping Type Ship Fee Lead Time
    DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
    Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
    UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
    TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
    EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
    REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

    Processing Time:Shipping fee depend on different zone and country.

    Payment

    Terms of payment Hand Fee
    Wire Transfer Wire Transfer charge US$30.00 banking fee.
    Paypal Paypal charge 4.0% service fee.
    Credit Card Credit Card charge 3.5% service fee.
    Western Union Western Union charge US.00 banking fee.
    Money Gram Money Gram charge US$0.00 banking fee.

    Guarantees

    1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

    2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

    Packing

    • Product

      Step1 :Product

    • Vacuum packaging

      Step2 :Vacuum packaging

    • Anti-static bag

      Step3 :Anti-static bag

    • Individual packaging

      Step4 :Individual packaging

    • Packaging boxes

      Step5 :Packaging boxes

    • bar-code shipping tag

      Step6 :bar-code shipping tag

    All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

    Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

    We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

    After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

    • ESD
    • ESD

    Part points

    • The SI2319DS-T1-E3 is a dual N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) chip that is commonly used in high frequency switching applications. This chip has a low gate capacitance and low on-resistance, making it ideal for use in DC-DC converters, voltage regulators, and switching power supplies. It features a compact surface mount package and can operate at high temperatures, making it suitable for use in a wide range of industrial and automotive applications.
    • Equivalent

      Equivalent products to SI2319DS-T1-E3 chip include SI2319DS-T1-GE3, SI2319DS-T1-RE3, and SI2319DS-T1-WE3. These are variations with different packaging or specifications but serve similar functions.
    • Features

      The SI2319DS-T1-E3 is a P-channel enhancement mode MOSFET with a voltage rating of -30V, a drain current of -2.5A, and a low threshold voltage. It features high power efficiency and is suitable for a variety of applications including power management and load switching in portable electronics.
    • Pinout

      The SI2319DS-T1-E3 is a dual N-channel MOSFET. It has a pin count of 6, with three pins per channel (Gate, Drain, Source). It functions as a switch or amplifier in electronic circuits, commonly used in power management applications.
    • Manufacturer

      The SI2319DS-T1-E3 is manufactured by Vishay Intertechnology, an American company specializing in electronic components and systems for a wide range of industries including automotive, industrial, consumer, and telecommunications. They produce a variety of semiconductor devices, passive components, and integrated circuits.
    • Application Field

      The SI2319DS-T1-E3 is a P-channel MOSFET transistor commonly used in power management applications such as battery protection circuits, load switches, and DC-DC converters. Its small size, low on-resistance, and high efficiency make it suitable for portable electronics, automotive systems, and industrial equipment.
    • Package

      The SI2319DS-T1-E3 chip is a dual P-channel MOSFET transistor. It comes in a surface-mount DFN (Dual Flat No-leads) package, with a size of 2x2 mm.

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