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vishay SI2309CDS-T1-GE3
SOT-23 MOSFETs compliant with ROHS regulations
Brands: Vishay
Mfr.Part #: SI2309CDS-T1-GE3
Datasheet: SI2309CDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.084 | $0.420 |
| 50 | $0.068 | $3.400 |
| 150 | $0.060 | $9.000 |
| 500 | $0.054 | $27.000 |
| 3000 | $0.049 | $147.000 |
| 6000 | $0.047 | $282.000 |
In Stock:9458 PCS
SI2309CDS-T1-GE3 General Description
The SI2309CDS-T1-GE3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It belongs to the Vishay's TrenchFET® power MOSFET series, known for their high performance and reliability in power management applications.Key specifications of the SI2309CDS-T1-GE3 include a drain-source voltage (VDS) of 20 volts, a continuous drain current (ID) of 4.3 amperes, and a low on-resistance (RDS(ON)) of 37 milliohms at a gate-source voltage (VGS) of 4.5 volts. It features a compact SOT-23 package, suitable for space-constrained designs.This MOSFET is optimized for use in various power switching applications such as load and power management, battery protection circuits, DC-DC converters, and motor control. Its low on-resistance minimizes power losses and improves efficiency in these applications, while its high drain-source voltage rating ensures robustness and reliability.Furthermore, the SI2309CDS-T1-GE3 offers fast switching speeds and low gate charge, enabling efficient operation and reducing switching losses. Its high current-handling capability makes it suitable for a wide range of low to moderate power applications across various industries including consumer electronics, automotive, industrial automation, and telecommunications
Features
Application
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 1.6 A | Rds On - Drain-Source Resistance | 345 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 2.7 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 10 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 10 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 5 ns | Width | 1.6 mm |
| Part # Aliases | SI2309CDS-T1-BE3 SI2309CDS-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2309CDS-T1-GE3 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) chip designed for use in power management applications. It features a low on-resistance, high switching speed, and low gate charge, making it ideal for applications requiring high efficiency and performance.
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Equivalent
Some equivalent products of the SI2309CDS-T1-GE3 chip are the IRF2807 and FDT86256. These are N-channel power MOSFETs with similar specifications and performance characteristics. It is important to check the datasheets of each component to ensure compatibility with the intended application. -
Features
1. N-channel power MOSFET 2. Silicon nitride passivated 3. Low On-Resistance 4. Fast switching speed 5. Small size, surface-mount package 6. Higher power handling capability 7. Ideal for high efficiency power management applications. -
Pinout
The SI2309CDS-T1-GE3 is a MOSFET transistor with a pin count of 3. Pin 1 is the source, Pin 2 is the gate, and Pin 3 is the drain. The transistor is used for switching and amplifying electronic signals in various electronic circuits. -
Manufacturer
The SI2309CDS-T1-GE3 is manufactured by Vishay Semiconductor. Vishay Semiconductor is an American company that designs and manufactures discrete semiconductors and passive electronic components. They offer a wide range of products such as diodes, MOSFETs, resistors, and capacitors for various industries including automotive, industrial, and telecommunications. -
Application Field
The SI2309CDS-T1-GE3 is a dual N-Channel 30V MOSFET commonly used in power management applications in portable devices, battery chargers, DC-DC converters, and motor control circuits. It is suitable for switching and amplification purposes due to its low on-resistance and high current handling capabilities. -
Package
The SI2309CDS-T1-GE3 chip is offered in a D-PAK package with a form of Surface Mount and a size of 6.6mm x 5.3mm.
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