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vishay SI2308BDS-T1-GE3
The SI2308BDS-T1-GE3 is a SOT-23 packaged N-channel MOSFET with a 60V voltage rating and a 1.9A current capacity
Brands: Vishay
Mfr.Part #: SI2308BDS-T1-GE3
Datasheet: SI2308BDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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N-Channel 60 V (D-S) MOSFET Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Features
- Halogen-free according to IEC 61249-2-21 available,TrenchFET® power MOSFET,100 % Rg and UIS tested
Application
Battery Switch |DC/DC ConverterSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 2.3 A | Rds On - Drain-Source Resistance | 156 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 2.3 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.66 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 7 ns |
| Product Type | MOSFET | Rise Time | 10 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 4 ns | Part # Aliases | SI2308BDS-T1-BE3 SI2308BDS-GE3 |
| Unit Weight | 0.000282 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2308BDS-T1-GE3 chip is a power MOSFET, which is an electronic component used in power management applications. It is designed to handle high currents and voltage levels efficiently and reliably. The chip is compact and provides low on-resistance and fast switching performance. It is commonly used in various industrial and automotive applications, such as motor controls, power supplies, and inverters.
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Equivalent
The equivalent products of the SI2308BDS-T1-GE3 chip include Si2308BDS-T1-GE2, SI2308BDS-T1-GE3R, and SI2318DS-T1-GE3. -
Features
The SI2308BDS-T1-GE3 is a small-signal MOSFET transistor. It has a low on-resistance of 0.08 ohms, suitable for high-frequency switching applications. It has a high current capacity of 3.5A and a voltage rating of 20V. It is designed for low power consumption and efficiency. -
Pinout
The SI2308BDS-T1-GE3 is a MOSFET transistor. It has 3 pins: gate (G), drain (D), and source (S). The gate pin controls the flow of current between the drain and the source. It is commonly used in power management applications due to its small size and low on-resistance. -
Manufacturer
The manufacturer of the SI2308BDS-T1-GE3 is Vishay Siliconix. It is a company that specializes in the design and production of discrete semiconductors and passive electronic components. -
Application Field
The SI2308BDS-T1-GE3 is a small signal MOSFET transistor that can be used in a variety of applications, including power management, motor control, and general-purpose switching. -
Package
The SI2308BDS-T1-GE3 chip is packaged in a SOT-23 form factor. The dimensions of a SOT-23 package are typically 2.9 mm x 1.3 mm x 1.0 mm or smaller.
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