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vishay SI2305CDS-T1-GE3
High Current Capability, Low Voltage Operation
Brands: Vishay
Mfr.Part #: SI2305CDS-T1-GE3
Datasheet: SI2305CDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.085 | $0.425 |
| 50 | $0.074 | $3.700 |
| 150 | $0.069 | $10.350 |
| 500 | $0.062 | $31.000 |
| 3000 | $0.059 | $177.000 |
| 6000 | $0.057 | $342.000 |
In Stock:9458 PCS
SI2305CDS-T1-GE3 General Description
MOSFET, P-CH, 8V, 5.8A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.8A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:960mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.8A; Power Dissipation Pd:960mW; Voltage Vgs Max:8V
Features
Application
Load Switch for Portable Devices |DC/DC ConverterSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 8 V |
| Id - Continuous Drain Current | 5.8 A | Rds On - Drain-Source Resistance | 35 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 12 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 10 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 20 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 40 ns |
| Typical Turn-On Delay Time | 20 ns | Width | 1.6 mm |
| Part # Aliases | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI2305CDS-T1-GE3 is a chip that belongs to the NVM N-Channel MOSFET family. It is designed with a standard ON resistance of 0.046 ohms and a maximum drain current of 3 A. The chip offers enhanced performance and reliability for power management applications, providing efficient power handling capabilities.
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Equivalent
Some equivalent products to the SI2305CDS-T1-GE3 chip are the SI2305BDS-T1-GE3, SI2305DDS-T1-GE3, and SI2305EDS-T1-GE3. These chips have similar specifications and functionality, making them suitable alternatives for the SI2305CDS-T1-GE3. -
Features
The SI2305CDS-T1-GE3 is a small-signal MOSFET transistor with a low on-resistance and low threshold voltage. It has a compact SOT-23 surface-mount package and is suitable for a wide range of applications such as switching, amplification, and voltage regulation. -
Pinout
The SI2305CDS-T1-GE3 is a MOSFET transistor with a pin count of 3. The pin functions include Gate (G), Drain (D), and Source (S). The Gate pin controls the flow of current between the Drain and Source pins. -
Manufacturer
The manufacturer of the SI2305CDS-T1-GE3 is Vishay Intertechnology, an American semiconductor company. -
Application Field
The SI2305CDS-T1-GE3 is a small signal field-effect transistor (FET) that is commonly used in applications such as low voltage switching, power management, and amplification circuits. It is suitable for use in various electronic devices like smartphones, tablets, and portable electronics due to its compact size and low power consumption. -
Package
The SI2305CDS-T1-GE3 chip is packaged in a SOT-23 form factor. The SOT-23 package has three pins and small dimensions of approximately 2.94mm x 1.30mm x 1.30mm.
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