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vishay SI2302CDS-T1-GE3
Product SI2302CDS-T1-GE3 is an N-channel MOSFET rated for 20 volts and 2.6 amps, packaged in a SOT-23 format
Brands: Vishay
Mfr.Part #: SI2302CDS-T1-GE3
Datasheet: SI2302CDS-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Mosfet, N Channel, 20V, 0.045Ohm, 2.6A, To-236, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:2.5V; Power Dissipation:710Mw Rohs Compliant: No |Vishay SI2302CDS-T1-GE3.
Features
Application
Load Switching for Portable Devices |DC/DC ConverterSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 2.9 A | Rds On - Drain-Source Resistance | 57 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 850 mV |
| Qg - Gate Charge | 3.5 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 860 mW |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 7 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 7 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 8 ns | Width | 1.6 mm |
| Part # Aliases | SI2302CDS-T1-BE3 SI2302CDS-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI2302CDS-T1-GE3 is a chip that belongs to the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family. It is used for power management applications and offers a low on-resistance of around 0.035 ohms, making it suitable for high-efficiency power conversion. The chip operates at a voltage range of 12V and features a compact SOT-23 package.
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Equivalent
The equivalent products of the SI2302CDS-T1-GE3 chip are SI2302CDS-T1-GE3R and SI2302CDS-T1-E3. -
Features
The SI2302CDS-T1-GE3 is a P-channel MOSFET transistor with a low on-resistance, suitable for low voltage applications. It has a maximum drain current of 2.3A, a threshold voltage of -0.9V to -1.3V, and is housed in a compact SOT-23 package. -
Pinout
The SI2302CDS-T1-GE3 is a SOT-23 N-channel MOSFET that has 3 pins. Pin 1 is the Gate, pin 2 is the Source, and pin 3 is the Drain. The MOSFET is used for switching applications and can handle a maximum voltage of 20V and a maximum current of 1.15A. -
Manufacturer
The manufacturer of the SI2302CDS-T1-GE3 is Vishay Siliconix. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. They specialize in the design, development, and production of a wide range of products including power MOSFETs, diodes, resistors, capacitors, and more, catering to various industries such as automotive, consumer electronics, telecommunications, and industrial applications. -
Application Field
The SI2302CDS-T1-GE3 is a power MOSFET transistor. It is commonly used in various applications including power management systems, battery protection circuits, load switches, and other low-voltage and low-power applications. -
Package
The package type of the SI2302CDS-T1-GE3 chip is SOT-23. The form is surface mount. The size of the chip is small and compact, measuring approximately 2.9mm x 1.3mm x 1.1mm.
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