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vishay SI2300DS-T1-GE3
Single N-Channel 30 V 68 mO 3 nC Surface Mount Power Mosfet - SOT-23
Brands: VISHAY
Mfr.Part #: SI2300DS-T1-GE3
Datasheet: SI2300DS-T1-GE3 Datasheet (PDF)
Package/Case: SOT23-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Mosfet, N Channel, 30V, 3.6A, Sot-23-3, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.6A; On Resistance Rds(On):0.055Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No
Features
Application
SWITCHINGSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 3.6 A | Rds On - Drain-Source Resistance | 68 mOhms |
| Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Qg - Gate Charge | 3 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 11 ns |
| Height | 1.45 mm | Length | 2.9 mm |
| Product Type | MOSFET | Rise Time | 15 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 10 ns | Width | 1.6 mm |
| Part # Aliases | SI2300DS-T1-BE3 SI2300DS-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2300DS-T1-GE3 is a power MOSFET chip designed by Vishay Intertechnology for use in a variety of electronic devices. This chip offers low on-resistance and high current capacity, making it ideal for efficient power management and switching applications.
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Equivalent
The equivalent products of SI2300DS-T1-GE3 chip are SI2302DS-T1-GE3 and SI2312DS-T1-GE3. These chips are all N-channel enhancement mode MOSFETs with similar specifications, such as VDS and IDS ratings, and are often used interchangeably in electronic circuits. -
Features
1. High Voltage N-Channel MOSFET 2. Low on-resistance (RDS(on)) 3. Small footprint DFN package 4. 20 V drain-source voltage 5. 2.5 A continuous drain current 6. Low gate charge 7. High-speed switching capabilities -
Pinout
The SI2300DS-T1-GE3 is a dual N-channel MOSFET with a SOT-23 package. It has 3 pins: Source, Gate, and Drain. The source pin is the common terminal providing the reference potential, while the gate pin controls the conductivity between the source and drain pins. The drain pin is the output terminal for the device. -
Manufacturer
The manufacturer of the SI2300DS-T1-GE3 is Vishay. Vishay is an American company that specializes in manufacturing a wide range of electronic components, including discrete semiconductors and passive components. They are known for their high-quality products and innovative technology solutions for various industries, such as automotive, telecommunications, and consumer electronics. -
Application Field
The SI2300DS-T1-GE3 is typically used in power management applications for portable electronics, battery-powered devices, and consumer electronics. It is also commonly used in space-constrained designs where a small footprint and high-efficiency performance are critical requirements. -
Package
The SI2300DS-T1-GE3 chip is available in a surface-mount package type, specifically a SC-70 form. It has a size of 2mm x 2mm.
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