vishay 2N7002E-T1-GE3
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R
Brands: Vishay
Mfr.Part #: 2N7002E-T1-GE3
Datasheet: 2N7002E-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To Bom2N7002E-T1-GE3 General Description
N-Channel 60 V 240mA (Ta) 350mW (Ta) Surface Mount TO-236
Features
- Halogen-free According to IEC 61249-2-21 Definition
- Low On-Resistance: 3
- Low Threshold: 2 V (typ.)
- Low Input Capacitance: 25 pF
- Fast Switching Speed: 7.5 ns
- Low Input and Output Leakage
- Compliant to RoHS Directive 2002/95/EC
Application
- Direct Logic-Level Interface: TTL/CMOS
- Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
- Battery Operated Systems
- Solid-State Relays
Specifications
Parameter | Value | Parameter | Value |
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Manufacturer: | Vishay | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | SOT-23-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 240 mA |
Rds On - Drain-Source Resistance: | 3 Ohms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V | Qg - Gate Charge: | 600 pC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 350 mW | Channel Mode: | Enhancement |
Series: | 2N7002E | Packaging: | MouseReel |
Brand: | Vishay Semiconductors | Configuration: | Single |
Forward Transconductance - Min: | 600 mS | Product Type: | MOSFET |
Factory Pack Quantity: | 3000 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 18 ns |
Typical Turn-On Delay Time: | 13 ns | Part # Aliases: | 2N7002E-GE3 |
Unit Weight: | 0.000282 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The 2N7002E-T1-GE3 is a small signal MOSFET transistor chip widely used in low voltage applications. It has a maximum continuous drain current of 115mA and a low threshold voltage of 1.3V. This chip offers high performance and reliability in a compact package, making it ideal for use in various electronic circuits.
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Equivalent
The equivalent products of 2N7002E-T1-GE3 chip are DMN2004LSD-13, FDC6327L, BSS84, 2N7002-TP, and ZXMN2A01FTA. These are all N-channel enhancement-mode MOSFETs with similar specifications and performance characteristics. -
Features
The 2N7002E-T1-GE3 is a small-signal N-channel MOSFET transistor. It features a low threshold voltage, typically around 0.8V, making it suitable for low-voltage applications. With a maximum drain-source voltage of 60V and a continuous drain current of 300mA, it's commonly used in switching and amplification circuits in various electronic devices. -
Pinout
The 2N7002E-T1-GE3 is a Single N-Channel MOSFET with a SOT-23 package. It has 3 pins: Gate, Drain, and Source. The Gate pin controls the current flow between the Drain and Source pins. It is commonly used for switching and amplifying signals in low power applications. -
Manufacturer
The 2N7002E-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of electronic components and related products. They specialize in producing a wide range of components including discrete semiconductors, diodes, capacitors, resistors, and sensors for various industries such as automotive, industrial, consumer electronics, and telecommunications. -
Application Field
The 2N7002E-T1-GE3 is commonly used in low voltage and low current applications such as switch and general purpose amplification in consumer electronics, automotive systems, industrial control, and communication devices. It is ideal for level shifting, load switching, and signal amplification due to its small size and low power consumption. -
Package
The 2N7002E-T1-GE3 chip is in a surface mount SOT-23 package with a N-channel MOSFET transistor, size of 2.9mm x 1.3mm x 1.0mm.
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