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vishay 2N7002K-T1-GE3
2N7002K-T1-GE3 is an N-type MOSFET with built-in Electrostatic Discharge (ESD) protection, designed to carry currents up to 0
Brands: Vishay
Mfr.Part #: 2N7002K-T1-GE3
Datasheet: 2N7002K-T1-GE3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 10 | $0.043 | $0.430 |
| 100 | $0.038 | $3.800 |
| 300 | $0.035 | $10.500 |
| 3000 | $0.025 | $75.000 |
| 6000 | $0.024 | $144.000 |
| 9000 | $0.023 | $207.000 |
In Stock:9458 PCS
2N7002K-T1-GE3 General Description
MOSFET, N-CH, 60V, 0.3A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:300mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V
Features
Application
Direct Logic-Level Interface: TTL/CMOS |Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. |Battery Operated Systems |Solid-State RelaysSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 300 mA | Rds On - Drain-Source Resistance | 2 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 400 pC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 350 mW |
| Channel Mode | Enhancement | Series | 2N7002K |
| Brand | Vishay Semiconductors | Configuration | Single |
| Forward Transconductance - Min | 100 mS | Height | 1.45 mm |
| Length | 2.9 mm | Product Type | MOSFET |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 35 ns |
| Typical Turn-On Delay Time | 25 ns | Width | 1.6 mm |
| Part # Aliases | 2N7002K-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The 2N7002K-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for low voltage, low power applications. It features a small size, low on-resistance, and high switching speed, making it ideal for use in portable electronics, power management systems, and other applications where space and power efficiency are crucial.
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Equivalent
The equivalent products of 2N7002K-T1-GE3 chip are 2N7002K and 2N7002T. These are enhancement mode field-effect transistors with similar specifications and performance characteristics. -
Features
- Low on-resistance: 4.5 ohms - Low gate threshold voltage: max 2.1V - Small package: SOT-23 - High continuous drain current: 230mA - Low input capacitance: 45pF - Fast switching speed: 35ns typical -
Pinout
The 2N7002K-T1-GE3 is a MOSFET transistor with 3 pins: gate, drain, and source. It is a low-power N-channel device rated for 60V and 115mA, commonly used for switching applications in low voltage circuits. -
Manufacturer
The manufacturer of the 2N7002K-T1-GE3 is Vishay Intertechnology, a global company that produces semiconductors and passive electronic components. Vishay Intertechnology is a leading supplier of discrete semiconductors, resistors, capacitors, and sensors for the automotive, industrial, consumer, and telecommunications markets. -
Application Field
The 2N7002K-T1-GE3 is commonly used in low voltage, low current applications such as small signal switching, amplification, and low power transistors. It is suitable for use in portable electronics, consumer electronics, and automotive applications where space and power savings are important considerations. -
Package
The 2N7002K-T1-GE3 chip is packaged in a Surface Mount form, with a SOT-23 package type, and has a size dimension of 2.9mm x 1.3mm x 1.3mm.
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