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vishay SIRA60DP-T1-GE3
Trans MOSFET N-CH 30V 100A 8-Pin PowerPAK SO EP T/R
Brands: Vishay
Mfr.Part #: SIRA60DP-T1-GE3
Datasheet: SIRA60DP-T1-GE3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.988 | $0.988 |
| 10 | $0.838 | $8.380 |
| 30 | $0.756 | $22.680 |
| 100 | $0.665 | $66.500 |
| 500 | $0.547 | $273.500 |
| 1000 | $0.528 | $528.000 |
In Stock: 9,458 PCS
SIRA60DP-T1-GE3 General Description
N-Channel 30 V 100A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8
Features
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Vishay | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | PowerPAK-SO-8 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V | Id - Continuous Drain Current: | 100 A |
| Rds On - Drain-Source Resistance: | 940 uOhms | Vgs - Gate-Source Voltage: | - 16 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V | Qg - Gate Charge: | 125 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 57 W | Channel Mode: | Enhancement |
| Tradename: | TrenchFET, PowerPAK | Series: | SIR |
| Packaging: | MouseReel | Brand: | Vishay / Siliconix |
| Configuration: | Single | Product Type: | MOSFET |
| Factory Pack Quantity: | 3000 | Subcategory: | MOSFETs |
| Unit Weight: | 0.017870 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIRA60DP-T1-GE3 is a power MOSFET chip designed for high efficiency and reliability in power management applications. It features a low on-state resistance, fast switching speed, and a compact package. It is suitable for use in a wide range of applications, including voltage regulation, motor control, and power conversion.
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Equivalent
The equivalent products of SIRA60DP-T1-GE3 chip are Vishay Semiconductor's SIJA60DP-T1-GE3, ON Semiconductor's NSR0320MW2T5G, and Infineon's BSZ070N10LS3G. These chips are all dual N-channel 60V MOSFETs with similar specifications and performance characteristics. -
Features
- 600V power MOSFET - Low on-resistance - Fast switching speed - Ideal for high-frequency applications - High avalanche capability - Thermally efficient D2PAK package - Halogen-free and RoHS compliant -
Pinout
The SIRA60DP-T1-GE3 is a dual P-channel MOSFET with a pin count of 6. Pin functions include gate (G), source 1 (S1), drain 1 (D1), source 2 (S2), drain 2 (D2), and exposed pad (EP). It is commonly used in power management applications. -
Manufacturer
The manufacturer of the SIRA60DP-T1-GE3 is Vishay Intertechnology, an American company that specializes in manufacturing discrete semiconductors and passive components for electronic applications. Vishay is known for its wide range of products including diodes, capacitors, resistors, and more, serving various industries such as automotive, industrial, telecommunications, and consumer electronics. -
Application Field
The SIRA60DP-T1-GE3 is commonly used in automotive, industrial, and consumer applications for voltage regulation and protection. It is suitable for use in DC-DC converters, power management systems, and battery charging circuits, providing efficient and reliable performance in a compact package. -
Package
The SIRA60DP-T1-GE3 chip comes in a DPak package type with a dual Schottky diode form. It has a size of 6.4mm x 4.6mm x 1.15mm.
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