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vishay SUB70N06-14

TO-263AB Package

ISO14001 ISO9001 DUNS

Brands: Vishay

Mfr.Part #: SUB70N06-14

Datasheet: SUB70N06-14 Datasheet (PDF)

Package/Case: TO-263-3

Product Type: Single FETs, MOSFETs

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for SUB70N06-14 or email to us: Email: [email protected], we will contact you within 12 hours.

SUB70N06-14 General Description

SUB70N06-14 is a N-channel MOSFET transistor manufactured by Vishay Siliconix. It has a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 70A, and a maximum power dissipation of 110W. This transistor is packaged in a TO-263-3, also known as D²PAK, which is a surface-mount package designed for high power applications where space is limited. The SUB70N06-14 features low on-resistance (RDS(on)) of 7.1 mΩ at a VGS of 10V, making it suitable for high current applications such as power supplies, motor control, and voltage regulation.The gate threshold voltage (VGS(th)) of the SUB70N06-14 transistor is typically between 2V and 4V, with a gate-source voltage (VGS) of ±20V. It has a maximum junction temperature of 175°C and a thermal resistance junction-to-case (RθJC) of 1.50°C/W, ensuring efficient heat dissipation.

Features

  • Low on-resistance
  • Fast switching speed
  • High input impedance
  • Low gate charge
  • Low reverse transfer capacitance
  • High peak current capability
  • Enhanced thermal characteristics
  • High avalanche energy capability
  • RoHS compliant

Application

  • Motor control applications
  • Robotics and automation systems
  • Power management systems
  • High-power switching circuits
  • UPS systems
  • DC-DC converters
  • Battery charging systems
  • Solar inverters

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS N
Technology Si Mounting Style SMD/SMT
Package / Case TO-263-3 Tradename TrenchFET
Series SUB Brand Vishay / Siliconix
Height 4.83 mm Length 10.67 mm
Product Type MOSFET Factory Pack Quantity 800
Subcategory MOSFETs Width 9.65 mm
Unit Weight 0.139332 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The SUB70N06-14 chip is a high-performance and low-voltage power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed with a low on-resistance and a high current-handling capability, making it suitable for various power applications. The chip features a 60V drain-source voltage rating and can handle significant current loads. It is commonly used in power management, motor control, and other electronic systems requiring efficient power switching and distribution.
  • Equivalent

    Some equivalent products of the SUB70N06-14 chip include the IRF1405, IRF3710Z, and IRF3205. These chips serve similar functions and can be used as substitutes for the SUB70N06-14.
  • Features

    The SUB70N06-14 is a N-channel MOSFET transistor. It has a drain-to-source voltage of 60 volts, a continuous drain current of 70 amperes, a fast switching speed, and low on-resistance. Additionally, it is designed for high-performance applications and offers high efficiency and reliable operation.
  • Pinout

    The SUB70N06-14 is a power MOSFET. It has a pin count of 3, including the gate (G), source (S), and drain (D). The function of this MOSFET is to control the flow of electric current between the source and drain terminals based on the voltage applied to the gate terminal.
  • Manufacturer

    The manufacturer of the SUB70N06-14 is Sunpro Electronic Co., Ltd. It is an electronic component manufacturing company specializing in the production of power management devices, such as MOSFETs and power ICs.
  • Application Field

    The SUB70N06-14 is a power MOSFET that is commonly used in various electronic applications, including power supplies, motor drives, and automotive systems. It is suitable for high voltage, high power applications where low on-state resistance and high current handling capability are required.
  • Package

    The SUB70N06-14 chip is available in a TO-263-3 (D2PAK) package type with four terminals. The form of the chip is N-channel MOSFET. The size of the package is approximately 10.67mm x 17.22mm x 4.63mm.

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