This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only See Product Specifications

Orders Over

$5000

Get a $50 Discount!

ON FQD2N100TM

Name: FQD2N100TM
Rating: 4.5 (10 reviews)

Transistor MOSFET, N-channel type, designed for operation at 1 kilovolt with a current rating of 1

Brands: ON

Mfr.Part #: FQD2N100TM

Datasheet: FQD2N100TM Datasheet (PDF)

Package/Case: TO-252

RoHS Status:

Stock Condition: 6,043 pcs, New Original

Product Type: Single FETs, MOSFETs

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty	Unit Price	Ext Price
1	$0.785	$0.785
10	$0.656	$6.560
30	$0.593	$17.790
100	$0.529	$52.900
500	$0.423	$211.500
1000	$0.404	$404.000

In Stock: 6,043 PCS

- +

Quick Quote

Please submit RFQ for FQD2N100TM or email to us: Email: [email protected], we will contact you within 12 hours.

Quantity^*

Email^*

Contact Name^*

Company

Remark

FQD2N100TM General Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: DPAK-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds Breakdown Voltage: 1 kV
Continuous Drain Current: 1.6 A
Rds On - Drain-Source On-Resistance: 7.1 Ohms
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 15.5 nC
Minimum Operating Temperature: -55°C
Maximum Operating Temperature: +150°C
Pd - Power Dissipation: 2.5 W
Fall Time: 35 ns
Forward Transconductance - Min: 1.9 S
Rise Time: 30 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 13 ns

Application

Lighting

Specifications

Parameter	Value	Parameter	Value
Status	Active	CAD Models
Compliance	PbAHP	Package Type	DPAK-3 / TO-252-3
Case Outline	369AS	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	2500	ON Target	N
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	1000	VGS Max (V)	±30
VGS(th) Max (V)	5	ID Max (A)	1.6
PD Max (W)	50	RDS(on) Max @ VGS = 2.5 V (mΩ)	-
RDS(on) Max @ VGS = 4.5 V (mΩ)	-	RDS(on) Max @ VGS = 10 V (mΩ)	9000
Qg Typ @ VGS = 4.5 V (nC)	-	Qg Typ @ VGS = 10 V (nC)	12
Ciss Typ (pF)	400	Pricing ($/Unit)	$0.4213Sample
feature-category	Power MOSFET	feature-material
feature-process-technology	DMOS	feature-configuration	Single
feature-channel-mode	Enhancement	feature-channel-type	N
feature-number-of-elements-per-chip	1	feature-maximum-drain-source-voltage-v	1000
feature-maximum-gate-source-voltage-v	±30	feature-maximum-gate-threshold-voltage-v	5
feature-maximum-continuous-drain-current-a	1.6	feature-maximum-drain-source-resistance-mohm	9000@10V
feature-typical-gate-charge-vgs-nc	12@10V	feature-typical-gate-charge-10v-nc	12
feature-typical-input-capacitance-vds-pf	400@25V	feature-typical-output-capacitance-pf	40
feature-maximum-power-dissipation-mw	2500	feature-packaging	Tape and Reel
feature-rad-hard		feature-pin-count	3
feature-supplier-package	DPAK	feature-standard-package-name1	TO-252
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	Yes	feature-svhc-exceeds-threshold	Yes
Series	QFET®	Product Status	Active
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V	Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	15.5 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	520 pF @ 25 V
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63

Shipping

	Ship Fee	Lead Time
DHL	$20.00-$40.00 (0.50 KG)	2-5 days
Fedex	$20.00-$40.00 (0.50 KG)	2-5 days
UPS	$20.00-$40.00 (0.50 KG)	2-5 days
TNT	$20.00-$40.00 (0.50 KG)	2-5 days
EMS	$20.00-$40.00 (0.50 KG)	2-5 days
REGISTERED AIR MAIL	$20.00-$40.00 (0.50 KG)	2-5 days

Processing Time：Shipping fee depend on different zone and country.

Payment

Terms of payment		Hand Fee
	Wire Transfer	charge US$30.00 banking fee.
	Paypal	charge 4.0% service fee.
	Credit Card	charge 3.5% service fee.
	Western Union	charge US.00 banking fee.
	Money Gram	charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

Step1 :Product
Step2 :Vacuum packaging
Step3 :Anti-static bag
Step4 :Individual packaging
Step5 :Packaging boxes
Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Part points

The FQD2N100TM chip is a power mosfet designed for high-speed switching applications. it is commonly used in power management circuits and motor control systems. the chip offers low on-resistance, high current capacity, and a compact package for easy integration into electronic designs. it provides efficient and reliable performance, making it suitable for a wide range of applications in various industries.
Equivalent

Some equivalent products of the FQD2N100TM chip include irf630tm, ntd2n100ctg, and stp7n10tm. these are all n-channel mosfet transistors with similar specifications and performance characteristics.
Features

The features of FQD2N100TM include low on-resistance, fast switching speed, high power dissipation capability, and a durable, compact package design.
Pinout

The FQD2N100TM is a mosfet transistor with a to-252 package. it has a pin count of 3, including a drain pin, a source pin, and a gate pin. the drain pin is used to connect to the high side of the load, the source pin connects to the low side of the load, and the gate pin controls the switching operation of the transistor.
Manufacturer

The manufacturer of the FQD2N100TM is fairchild semiconductor. it is a company that specializes in the design, development, and production of a wide range of semiconductor solutions for various markets including automotive, industrial, consumer electronics, and telecommunications.
Application Field

The FQD2N100TM is a power mosfet transistor commonly used in applications requiring high power switching, such as motor control, power supplies, and lighting systems. it can also be utilized in audio amplifiers and other industrial applications that require high voltage and current capabilities.
Package

The FQD2N100TM chip has a to-252 (dpak) package type, a vertical dmos (vdmos) form, and a size of 6.3mm x 6.2mm.