Orders Over
$5000vishay SI2323DS-T1-E3
SI2323DS-T1-E3 is a P-channel MOSFET housed in SOT-23 package
Brands: Vishay
Mfr.Part #: SI2323DS-T1-E3
Datasheet: SI2323DS-T1-E3 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $0.351 | $0.351 |
10 | $0.306 | $3.060 |
30 | $0.286 | $8.580 |
100 | $0.262 | $26.200 |
500 | $0.246 | $123.000 |
1000 | $0.240 | $240.000 |
In Stock: 9,458 PCS
SI2323DS-T1-E3 General Description
P-CHANNEL 20-V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Features
Application
SWITCHINGSpecifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4.7 A | Rds On - Drain-Source Resistance | 39 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
Qg - Gate Charge | 19 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 48 ns |
Forward Transconductance - Min | 16 S | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 43 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 71 ns | Typical Turn-On Delay Time | 25 ns |
Width | 1.6 mm | Part # Aliases | SI2323DS-T1-BE3 SI2323DS-E3 |
Unit Weight | 0.000282 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2323DS-T1-E3 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) chip that is commonly used for switching applications in electronic circuits. It has a low on-resistance and high efficiency, making it suitable for battery-operated devices and other power management applications.
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Equivalent
The equivalent products of SI2323DS-T1-E3 chip are SI2323DS-T1-GE3, SI2323DS-T1-E3-GE3, and SI2323DS-T1-VE3. These chips are also P-Channel MOSFETs with similar characteristics and specifications. -
Features
The SI2323DS-T1-E3 is a dual N-channel MOSFET with a low on-resistance of 0.095 ohms, a continuous drain current of 2.6A, and a maximum drain-source voltage of 20V. This MOSFET comes in a small SC-70 package, making it ideal for space-constrained applications. -
Pinout
The SI2323DS-T1-E3 is a dual P-channel MOSFET with a pin count of 6 pins. The functions of the pins are as follows: Pin 1 and Pin 6 - Source, Pin 2 and Pin 5 - Gate, Pin 3 and Pin 4 - Drain. It is commonly used in power management applications. -
Manufacturer
The SI2323DS-T1-E3 is manufactured by Vishay Siliconix, a semiconductor company specializing in discrete semiconductors and passive components. Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of electronic components used in industrial, consumer, automotive, and telecommunications applications. -
Application Field
The SI2323DS-T1-E3 is a dual N-channel MOSFET that is commonly used in power management applications such as battery chargers, power supplies, and voltage regulators. It is also used in motor control, LED lighting, and other high-power switch circuits where fast switching and low on-resistance are important. -
Package
The SI2323DS-T1-E3 chip comes in a SOT-23 package, with a dual n-channel MOSFET configuration. It has a form factor of surface mount and measures 2.9mm x 2.8mm x 1.4mm.
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