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vishay SI2323DS-T1-E3 48HRS

SI2323DS-T1-E3 is a P-channel MOSFET housed in SOT-23 package

ISO14001 ISO9001 DUNS

Brands: Vishay

Mfr.Part #: SI2323DS-T1-E3

Datasheet: SI2323DS-T1-E3 Datasheet (PDF)

Package/Case: SOT-23-3

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Product Type: Single FETs, MOSFETs

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $0.351 $0.351
10 $0.306 $3.060
30 $0.286 $8.580
100 $0.262 $26.200
500 $0.246 $123.000
1000 $0.240 $240.000

In Stock: 9,458 PCS

- +

Quick Quote

Please submit RFQ for SI2323DS-T1-E3 or email to us: Email: [email protected], we will contact you within 12 hours.

SI2323DS-T1-E3 General Description

P-CHANNEL 20-V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Features

  • None
  • Application

    SWITCHING

    Specifications

    Parameter Value Parameter Value
    Product Category MOSFET RoHS Details
    Technology Si Mounting Style SMD/SMT
    Package / Case SOT-23-3 Transistor Polarity P-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
    Id - Continuous Drain Current 4.7 A Rds On - Drain-Source Resistance 39 mOhms
    Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV
    Qg - Gate Charge 19 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
    Channel Mode Enhancement Tradename TrenchFET
    Series SI2 Brand Vishay Semiconductors
    Configuration Single Fall Time 48 ns
    Forward Transconductance - Min 16 S Height 1.45 mm
    Length 2.9 mm Product Type MOSFET
    Rise Time 43 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 P-Channel
    Typical Turn-Off Delay Time 71 ns Typical Turn-On Delay Time 25 ns
    Width 1.6 mm Part # Aliases SI2323DS-T1-BE3 SI2323DS-E3
    Unit Weight 0.000282 oz

    Shipping

    Shipping Type Ship Fee Lead Time
    DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
    Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
    UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
    TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
    EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
    REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

    Processing Time:Shipping fee depend on different zone and country.

    Payment

    Terms of payment Hand Fee
    Wire Transfer Wire Transfer charge US$30.00 banking fee.
    Paypal Paypal charge 4.0% service fee.
    Credit Card Credit Card charge 3.5% service fee.
    Western Union Western Union charge US.00 banking fee.
    Money Gram Money Gram charge US$0.00 banking fee.

    Guarantees

    1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

    2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

    Packing

    • Product

      Step1 :Product

    • Vacuum packaging

      Step2 :Vacuum packaging

    • Anti-static bag

      Step3 :Anti-static bag

    • Individual packaging

      Step4 :Individual packaging

    • Packaging boxes

      Step5 :Packaging boxes

    • bar-code shipping tag

      Step6 :bar-code shipping tag

    All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

    Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

    We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

    After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

    • ESD
    • ESD

    Part points

    • The SI2323DS-T1-E3 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) chip that is commonly used for switching applications in electronic circuits. It has a low on-resistance and high efficiency, making it suitable for battery-operated devices and other power management applications.
    • Equivalent

      The equivalent products of SI2323DS-T1-E3 chip are SI2323DS-T1-GE3, SI2323DS-T1-E3-GE3, and SI2323DS-T1-VE3. These chips are also P-Channel MOSFETs with similar characteristics and specifications.
    • Features

      The SI2323DS-T1-E3 is a dual N-channel MOSFET with a low on-resistance of 0.095 ohms, a continuous drain current of 2.6A, and a maximum drain-source voltage of 20V. This MOSFET comes in a small SC-70 package, making it ideal for space-constrained applications.
    • Pinout

      The SI2323DS-T1-E3 is a dual P-channel MOSFET with a pin count of 6 pins. The functions of the pins are as follows: Pin 1 and Pin 6 - Source, Pin 2 and Pin 5 - Gate, Pin 3 and Pin 4 - Drain. It is commonly used in power management applications.
    • Manufacturer

      The SI2323DS-T1-E3 is manufactured by Vishay Siliconix, a semiconductor company specializing in discrete semiconductors and passive components. Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of electronic components used in industrial, consumer, automotive, and telecommunications applications.
    • Application Field

      The SI2323DS-T1-E3 is a dual N-channel MOSFET that is commonly used in power management applications such as battery chargers, power supplies, and voltage regulators. It is also used in motor control, LED lighting, and other high-power switch circuits where fast switching and low on-resistance are important.
    • Package

      The SI2323DS-T1-E3 chip comes in a SOT-23 package, with a dual n-channel MOSFET configuration. It has a form factor of surface mount and measures 2.9mm x 2.8mm x 1.4mm.

    We provide high quality products, thoughtful service and after sale guarantee

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    • quantity

      Minimum order quantity starts from 1pcs.

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      365 days quality guarantee for all products

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