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ON FDBL0150N80
MOSFET, N-CH, 80V, 300A, MO-299A-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Source Voltage Vds:80V; On Resistance
Brands: ON Semiconductor, LLC
Mfr.Part #: FDBL0150N80
Datasheet: FDBL0150N80 Datasheet (PDF)
Package/Case: MO-299A
Product Type: Transistors
RoHS Status:
Stock Condition: 3430 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MOSFET, N-CH, 80V, 300A, MO-299A-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 300A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 429W; Transistor Case Style: MO-299A; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Features
- Typical RDS(on) = 1.1 mΩ at VGS = 10V, ID = 80 A
- Typical Qg(tot) = 172 nC at VGS = 10V, ID = 80 A
- UIS Capability
- RoHS Compliant
Application
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automation
- Battery Operated Tools
- Battery Protection
- Solar Inverters
- Universal Power Supply
- Energy Inverters
- Energy Storage
- Load Switch
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | FDBL0150N80 | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Manufacturer Package Code | 100CU | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Factory Lead Time | 67 Weeks |
| Samacsys Manufacturer | onsemi | Avalanche Energy Rating (Eas) | 820 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 80 V | Drain Current-Max (ID) | 300 A |
| Drain-source On Resistance-Max | 0.0014 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MO-299A | JESD-30 Code | R-PSSO-F2 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 429 W | Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | FLAT |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 193 ns | Turn-on Time-Max (ton) | 128 ns |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | TMOS | feature-configuration | Single Seven Source |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 80 |
| feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | 4 |
| feature-maximum-continuous-drain-current-a | 300 | feature-maximum-drain-source-resistance-mohm | 1.4@10V |
| feature-typical-gate-charge-vgs-nc | 172@10V | feature-typical-gate-charge-10v-nc | 172 |
| feature-typical-input-capacitance-vds-pf | 12800@25V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 429000 | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 9 | |
| feature-supplier-package | PSOF | feature-standard-package-name1 | |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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FDBL0150N80 is a power MOSFET chip used in various electronic devices. It is designed to efficiently regulate and control high power applications, offering low on-resistance and high current capability. With its advanced technology, the chip ensures improved performance, reliability, and energy efficiency. It is commonly used in power supplies, motor control systems, automotive electronics, and other high-power applications.
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Equivalent
There are no directly equivalent products to the FDBL0150N80 chip. However, you may find similar power MOSFET chips from other manufacturers that have similar specifications and features. -
Features
The FDBL0150N80 is a MOSFET transistor with a drain-source voltage rating of 800V and a continuous drain current of 1.5A. It features low on-resistance and fast switching speed, making it suitable for applications requiring high voltage and high power operation, such as power supplies, motor drives, and inverters. -
Pinout
The FDVL0150N80 is a power MOSFET transistor. It has a pin count of 5, with the following functions: Gate (G), Source (S), Drain (D), Body Diode Cathode (K), and Body Diode Anode (A). -
Manufacturer
The manufacturer of the FDBL0150N80 is ON Semiconductor. It is a semiconductor manufacturing company that specializes in producing a wide range of electronic components, including power management systems, sensors, analog and mixed-signal devices, and integrated circuits. -
Application Field
The FDBL0150N80 is a power MOSFET transistor that can be used in a variety of applications, including industrial equipment, motor controls, power supplies, inverters, and lighting systems. The transistor's high voltage and current capabilities make it well-suited for high-power applications. -
Package
The FDBL0150N80 chip is in a TO-263 package type, also known as D2PAK. Its form is a surface mount, with three pins. The chip's size is approximately 10 mm x 11 mm.
Datasheet PDF
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