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ON FDS86242
N-Channel 150 V 4.1A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Brands: ON
Mfr.Part #: FDS86242
Datasheet: FDS86242 Datasheet (PDF)
Package/Case: SOP-8
RoHS Status:
Stock Condition: 3814 pcs, New Original
Product Type: Transistors
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1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.502 | $0.502 |
| 10 | $0.436 | $4.360 |
| 30 | $0.403 | $12.090 |
| 100 | $0.371 | $37.100 |
| 500 | $0.351 | $175.500 |
| 1000 | $0.340 | $340.000 |
In Stock:3814 PCS
FDS86242 General Description
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Features
- Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
- Max rDS(on) = 98mΩ at VGS = 6 V, ID = 3.3 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely usedsurface mount package
- 100% UIL Tested
- RoHS Compliant
Application
- This product is general usage and suitable for many different applications.
- DC/DC Converters
- Off-line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V Systems
- High Voltage Synchronous Rectifier
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
| Id - Continuous Drain Current | 20 A | Rds On - Drain-Source Resistance | 56.3 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 4.9 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 5 W |
| Channel Mode | Enhancement | Tradename | PowerTrench |
| Series | FDS86242 | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 10 ns |
| Forward Transconductance - Min | 11 S | Height | 1.75 mm |
| Length | 4.9 mm | Product Type | MOSFET |
| Rise Time | 10 ns | Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | N-Channel Power Trench MOSFET | Typical Turn-Off Delay Time | 23 ns |
| Typical Turn-On Delay Time | 16 ns | Width | 3.9 mm |
| Unit Weight | 0.004586 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDS86242 chip is a small electronic component commonly used for switching applications in power distribution systems. It is a dual N-channel MOSFET device, designed to handle high voltage and current. The chip offers low on-resistance and fast switching speed, making it suitable for a variety of applications including motor control, power supplies, and battery protection circuits.
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Features
The FDS86242 is a small signal N-channel MOSFET transistor with a maximum drain-source voltage of 30V, drain current of 3.6A, and 0.34Ω on-state resistance. It has a low gate threshold voltage and can provide fast switching speeds. It is commonly used in power management and load switching applications. -
Pinout
The FDS86242 is a dual N-channel PowerTrench MOSFET. It has a pin count of 8, with two pins for drain, one pin for source, one pin for gate, and four additional pins for other functions such as body diode, gate driver, or package. -
Manufacturer
The manufacturer of the FDS86242 is Fairchild Semiconductor. It is a global company that specializes in the design, production, and distribution of integrated circuits for various industries such as automotive, consumer electronics, and industrial applications. -
Application Field
The FDS86242 is a small signal N-channel MOSFET that can be used in various applications, including power management and switching circuits. It is commonly utilized in smartphones, tablets, laptops, and other portable devices to control and regulate voltage and current. Additionally, it can also be found in automotive electronics, industrial systems, and other low-power applications. -
Package
The FDS86242 chip is packaged in a standard SO-8 (Small Outline) package, which is a surface mount device with eight pins. The package size is approximately 4.9mm x 3.9mm.
Datasheet PDF
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products
Product met specifications, but would have appreciated more detailed information. Satisfied with experience overall.