Orders Over
$5000ON FDS6679AZ
P-Channel 30 V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Brands: ON
Mfr.Part #: FDS6679AZ
Datasheet: FDS6679AZ Datasheet (PDF)
Package/Case: SOP-8
RoHS Status:
Stock Condition: 6,963 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $0.364 | $0.364 |
10 | $0.296 | $2.960 |
30 | $0.267 | $8.010 |
100 | $0.230 | $23.000 |
500 | $0.192 | $96.000 |
1000 | $0.183 | $183.000 |
In Stock: 6,963 PCS
FDS6679AZ General Description
This P-Channel MOSFET is producted using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
- Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A
- Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 6kV typical (note 3)
- High performance trench technology for extremely lowrDS(on)
- High power and current handing capability
- High power and current handing capability
Application
- This product is general usage and suitable for many different applications.
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 13 A | Rds On - Drain-Source Resistance | 9.3 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 96 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDS6679AZ | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 92 ns |
Height | 1.75 mm | Length | 4.9 mm |
Product Type | MOSFET | Rise Time | 15 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 210 ns |
Typical Turn-On Delay Time | 13 ns | Width | 3.9 mm |
Unit Weight | 0.004586 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDS6679AZ is a dual N-channel PowerTrench MOSFET chip designed for high-speed switching applications in power supplies, motor controls, and inverters. It offers low on-state resistance, high current-carrying capability, and fast switching speeds. Its small form factor and robust design make it popular in various industrial and automotive applications.
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Equivalent
The equivalent products of the FDS6679AZ chip are Si2323DS and SI2301DS. These chips have similar specifications and can be used as replacements for the FDS6679AZ in various electronic applications. -
Features
- P-channel MOSFET - Low on-resistance - Fast switching speed - Low gate charge - High performance - Suitable for use in power management applications such as power supplies and battery chargers -
Pinout
The FDS6679AZ is a dual N-channel PowerTrench MOSFET transistor with a pin count of 8. Pin functions include Gate 1, Drain 1, Source 1, Source 2, Drain 2, Gate 2, GND, and VCC. It is typically used for power management applications in electronic devices. -
Manufacturer
The FDS6679AZ is manufactured by ON Semiconductor, a manufacturer of power management and analog semiconductor solutions for various applications. With a focus on innovation, quality, and sustainable practices, ON Semiconductor serves customers across the automotive, industrial, communication, and consumer markets worldwide. -
Application Field
The FDS6679AZ is commonly used in applications that require high-speed switching, such as power supplies, motor control, and automotive systems. It is also suitable for use in battery management systems, LED lighting, and other power management applications that require high efficiency and reliability. -
Package
The FDS6679AZ chip comes in a D-Pak package type, with a TO-252(DPAK) form, and a size of approximately 6.6mm x 9.15mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products