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ON FDS6673BZ
P-Channel 30 V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Brands: ON
Mfr.Part #: FDS6673BZ
Datasheet: FDS6673BZ Datasheet (PDF)
Package/Case: SOP8
RoHS Status:
Stock Condition: 2984 pcs, New Original
Product Type: Transistors
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.713 | $0.713 |
| 10 | $0.593 | $5.930 |
| 30 | $0.533 | $15.990 |
| 100 | $0.474 | $47.400 |
| 500 | $0.438 | $219.000 |
| 1000 | $0.420 | $420.000 |
In Stock:2984 PCS
FDS6673BZ General Description
This P-Channel MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
- Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
- Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 6.5kV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS compliant
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 14.5 A | Rds On - Drain-Source Resistance | 6.5 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 124 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
| Channel Mode | Enhancement | Tradename | PowerTrench |
| Series | FDS6673BZ | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 105 ns |
| Forward Transconductance - Min | 60 S | Height | 1.75 mm |
| Length | 4.9 mm | Product Type | MOSFET |
| Rise Time | 16 ns | Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Type | MOSFET | Typical Turn-Off Delay Time | 225 ns |
| Typical Turn-On Delay Time | 14 ns | Width | 3.9 mm |
| Unit Weight | 0.004586 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDS6673BZ is a power MOSFET chip used in a variety of electronic devices. It is designed to handle high voltage and current, making it suitable for applications such as power supplies, motor control, and inverter circuits. With low on-resistance and fast switching capabilities, this chip offers efficient performance and reliable operation.
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Equivalent
Some possible equivalent products for the FDS6673BZ chip include FDS5670, FDS6675B, and FDP6670AL. -
Features
The FDS6673BZ is a power MOSFET with a voltage rating of 30V and a current rating of 13A. It has low on-resistance, making it suitable for high-power applications. It also features a fast switching speed, low gate charge, and low gate drive requirements. -
Pinout
The FDS6673BZ is a 8-pin n-channel MOSFET transistor. The pin count and function of each pin are as follows: 1. Drain - handles the flow of current from the transistor 2. Drain - alternate pin for the current flow 3. Source - connects to the ground or negative power supply 4. Gate - controls the switching action of the transistor 5. Gate - alternate pin for the switching action 6. Source - alternate pin for the ground connection 7. Not Connected - unused pin 8. Not Connected - unused pin -
Manufacturer
The manufacturer of the FDS6673BZ is Fairchild Semiconductor. It is an American company that specializes in designing, manufacturing, and selling various semiconductor products. -
Application Field
The FDS6673BZ is a MOSFET transistor commonly used in power supply applications and switching circuits. It is suitable for various electronic devices requiring high-performance switching capabilities, such as computer power supplies, industrial power control systems, motor drives, LED lighting, and automotive applications. -
Package
The FDS6673BZ chip comes in a SOP-8 package type, with an overall form of a small outline package. The size of the package is approximately 5.1mm x 6.2mm.
Datasheet PDF
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