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ON FDV301N
Tape and reel packaging of FDV301N N-channel MOSFET transistor offers 25V and 0.5A ratings in SOT-23 format
Brands: Onsemi
Mfr.Part #: FDV301N
Datasheet: FDV301N Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9288 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 10 | $0.063 | $0.630 |
| 100 | $0.052 | $5.200 |
| 300 | $0.045 | $13.500 |
| 3000 | $0.040 | $120.000 |
| 6000 | $0.037 | $222.000 |
| 9000 | $0.035 | $315.000 |
In Stock:9288 PCS
FDV301N General Description
The FDV301N is a N-channel enhancement mode field-effect transistor (FET) designed for high-speed switching applications in power management circuits. It has a drain-to-source voltage (VDS) rating of -20V and a continuous drain current (ID) of -2.5A. The FDV301N features low on-resistance (RDS(on)) of 88mΩ at VGS = -4.5V, which helps to minimize power losses and ensure efficient operation.This FET is housed in a small SOT-23 package, making it suitable for space-constrained PCB layouts. The FDV301N has a gate threshold voltage (VGS(th)) range of -0.7V to -2.5V, allowing for precise control of the switching characteristics. It also has a fast switching speed and low gate charge, which further enhances its performance in high-speed applications.
Features
Application
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
| Id - Continuous Drain Current | 220 mA | Rds On - Drain-Source Resistance | 5 Ohms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 700 mV |
| Qg - Gate Charge | 700 pC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 350 mW |
| Channel Mode | Enhancement | Series | FDV301N |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 6 ns | Forward Transconductance - Min | 0.2 S |
| Height | 1.2 mm | Length | 2.9 mm |
| Product | MOSFET Small Signals | Product Type | MOSFET |
| Rise Time | 6 ns | Factory Pack Quantity | 15000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | FET | Typical Turn-Off Delay Time | 3.5 ns |
| Typical Turn-On Delay Time | 3.2 ns | Width | 1.3 mm |
| Part # Aliases | FDV301N_NL |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDV301N chip is a MOSFET transistor designed for low-power switching applications. It is capable of handling currents up to 120mA and voltages up to 25V. The chip features a low threshold voltage, fast switching speed, and low on-resistance. It is commonly used in various consumer electronic devices, such as smartphones, tablets, and handheld gaming consoles.
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Equivalent
Some equivalent products to the FDV301N chip include the FDV301N-7, FDN303N, FDN304N, and BSS138. -
Features
The FDV301N is a N-channel enhancement mode MOSFET with a maximum drain current of 300mA, a drain-source voltage rating of 25V, and low on-resistance. It has a small package size, making it suitable for space-constrained applications. Additionally, it has fast switching speed and low leakage current. -
Pinout
The FDV301N is a N-Channel MOSFET transistor with a pin count of 3. The three pins are the gate (G), the drain (D), and the source (S). The gate pin is used to control the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the FDV301N is Fairchild Semiconductor. It is a multinational company that specializes in designing, developing, and manufacturing various semiconductor products. -
Application Field
The FDV301N is a field-effect transistor (FET) commonly used in amplifier circuits and low power switching applications. It is suitable for use in audio amplifiers, sensor circuits, and battery-powered devices. -
Package
The FDV301N chip is available in a SOT-23 package type. It has a form of a small plastic surface-mount package. The size of the chip is 2.8mm x 1.3mm x 1.1mm.
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