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ON FDN352AP
P-Channel 30 V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Brands: ON
Mfr.Part #: FDN352AP
Datasheet: FDN352AP Datasheet (PDF)
Package/Case: SOT23-3
RoHS Status:
Stock Condition: 5388 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.225 | $1.125 |
| 50 | $0.181 | $9.050 |
| 150 | $0.161 | $24.150 |
| 500 | $0.138 | $69.000 |
| 3000 | $0.118 | $354.000 |
| 6000 | $0.111 | $666.000 |
In Stock:5388 PCS
FDN352AP General Description
This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
Features
- -1.3A, -30V
- RDS(ON) = 180 mΩ @ VGS = -10V
- -1.1A, -30V
- RDS(ON) = 300 mΩ @ VGS = -4.5V
- High performance trench technology for extremely low RDS(ON).
- High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability
Application
- This product is general usage and suitable for many different applications.
- Notebook computer power management
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SSOT-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 1.3 A | Rds On - Drain-Source Resistance | 180 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 1.9 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 mW |
| Channel Mode | Enhancement | Series | FDN352AP |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 15 ns | Forward Transconductance - Min | 2 S |
| Height | 1.12 mm | Length | 2.9 mm |
| Product | MOSFET Small Signals | Product Type | MOSFET |
| Rise Time | 15 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Type | MOSFET | Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 4 ns | Width | 1.4 mm |
| Part # Aliases | FDN352AP_NL |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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FDN352AP is a power MOSFET chip designed for high-speed switching applications in power management circuits. It offers low on-resistance and high current-handling capabilities, making it suitable for mobile devices, DC-DC converters, and motor control applications. With a compact package and efficient performance, FDN352AP is a reliable choice for various electronic designs.
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Equivalent
The equivalent products of FDN352AP chip are SI2302DS, DMN8024LSS, IRF4905S, and IRF7832. These are power MOSFET transistors with similar specifications and features that can be used as alternatives to the FDN352AP chip in various applications. -
Features
- N-channel MOSFET transistor - 30V drain-source voltage - 6.5A continuous drain current - Low ON-resistance of 0.05 ohms - Low gate threshold voltage of 1V - Suitable for switching applications in power supplies, motor control, and LED lighting circuits. -
Pinout
The FDN352AP is a dual N-channel MOSFET transistor with a pin count of 6. It is used for switching and amplifying signals in electronic circuits. Pin 1 is the source for the first transistor, pin 4 is the source for the second transistor, and pins 2, 3, 5, and 6 are the gates and drains of the two transistors. -
Manufacturer
The manufacturer of the FDN352AP is Fairchild Semiconductor, which is a semiconductor company that specializes in manufacturing a wide range of integrated circuits and discrete devices for various applications, including power management, signal processing, and interface technologies. Fairchild Semiconductor was founded in 1957 and has since become a leading player in the global semiconductor industry. -
Application Field
The FDN352AP is commonly used in applications such as power management, motor control, battery protection, and LED lighting control. It can be found in portable devices, robotics, automotive systems, and industrial equipment where high efficiency and low power consumption are essential. -
Package
The FDN352AP chip is a surface mount package type with a form of SOT-23 and a size of 2.9mm x 1.3mm x 1.3mm.
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